International Rectifier IRFP3077PBF Datasheet

PD - 97126

)

)

IRFP3077PbF

Applications

l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits

Benefits

l Worldwide Best R
l Improved Gate, Avalanche and Dynamic dV/dt

DS(on)

in TO-247

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

HEXFET® Power MOSFET

D

V

DSS

R

DS(on

typ.

max.

G

GDS

Gate Drain Source

I

D

(Silicon Limited)

I

S

D

(Package Limited)

D

D

G

TO-247AC

75V

2.8m

3.3m

200A

:
:

c

120A

S

Absolute Maximum Ratings

Symbol Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

D

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited

I

D

I

DM

@TC = 25°C

P

D

V

GS

dV/dt
T

J

T

STG

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

d

f

Max.

c

200

c

140

120

850

340

2.3

± 20

2.5

-55 to + 175

300

10lbxin (1.1Nxm)

W

W/°C

V/ns

°C

Avalanche Characteristics

g

e

200

See Fig. 14, 15, 22a, 22b,

mJ

mJ

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

c

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

JC

θ

R

CS

θ

R

JA

θ

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

j –––

0.24 ––– °C/W

j ––– 40

0.44

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A

V

A

3/3/08

IRFP3077PbF

/

i

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

ΔV

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 160 ––– ––– S
Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

eff. (ER)

oss

eff. (TR)

C

oss

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

I

RRM

t

on

Drain-to-Source Breakdown Voltage 75 ––– ––– V

ΔT

Breakdown Voltage Temp. Coefficient ––– 0.091 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 2.8 3.3
Gate Threshold Voltage 2.0 ––– 4.0 V
Drain-to-Source Leakage Current ––– ––– 20 μA

––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Gate Input Resistance ––– 1.2 ––– Ω f = 1MHz, open drain

Total Gate Charge ––– 160 220 nC
Gate-to-Source Charge ––– 37 –––
Gate-to-Drain ("Miller") Charge ––– 42 –––
Turn-On Delay Time ––– 25 ––– ns
Rise Time –––87–––
Turn-Off Delay Time ––– 69 –––
Fall Time ––– 95 –––
Input Capacitance ––– 9400 ––– pF
Output Capacitance ––– 820 –––
Reverse Transfer Capacitance ––– 350 –––

Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)

Continuous Source Current ––– –––

–––1090–––

–––1260–––

h

200

c

(Body Diode)
Pulsed Source Current ––– ––– 850

(Body Diode)

di

Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 42 63 ns

––– 50 75
Reverse Recovery Charge ––– 59 89 nC

–––86130
Reverse Recovery Current ––– 2.5 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = 0V, ID = 250μA
Reference to 25°C, I

= 10V, ID = 75A

V

mΩ

GS

= VGS, ID = 250μA

V

DS

= 75V, VGS = 0V

V

DS

V

= 75V, VGS = 0V, TJ = 125°C

DS

= 20V

V

GS

= -20V

V

GS

VDS = 50V, ID = 75A

= 75A

I

D

V

= 38V

DS

V

= 10V

GS

= 38V

V

DD

I

= 75A

D

= 2.1Ω

R

G

VGS = 10V

= 0V

V

GS

= 50V

V

DS

ƒ = 1.0MHz

= 0V, VDS = 0V to 60V j, See Fig.11

V

GS

= 0V, VDS = 0V to 60V h, See Fig. 5

V

GS

MOSFET symbol

A

showing the
integral reverse

p-n junction diode.
T

= 25°C, IS = 75A, VGS = 0V

J

T

= 25°C VR = 64V,

J

= 125°C IF = 75A

T

J

T

= 25°C

J

= 125°C

T

J

T

= 25°C

J

Conditions

Conditions

g

g

Conditions

di/dt = 100A/μs

= 5mA

D

g

d

D

G

S

g

g

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25Ω, I
above this value .

 I

≤ 75A, di/dt ≤ 400A/μs, V

SD

, starting TJ = 25°C, L = 0.028mH

Jmax

= 120A, VGS =10V. Part not recommended for use

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

 C

C

 R

while V

oss

eff. (ER) is a fixed capacitance that gives the same energy as

oss

while V

oss

is measured at TJ approximately 90°C

θ

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

DSS

.

.

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IRFP3077PbF

1000

)
A

(
t
n
e

r

r
u

C
e

c

r
u

100

o
S

­o

t

­n

i
a

r
D

,

D

I

4.5V

TOP 15V

BOTTOM 4.5V

≤

60μs PULSE WIDTH

Tj = 25°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

)

Α

(

t
n
e

r

r

100

u
C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

TJ = 175°C

10

1

2.0 3.0 4.0 5.0 6.0 7.0 8.0

TJ = 25°C

V

= 25V

DS

≤

60μs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

VGS

10V

8.0V

6.0V

5.5V

5.0V

4.8V

1000

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

TOP 15V

BOTTOM 4.5V

100

VGS

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

≤

60μs PULSE WIDTH

Tj = 175°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID = 75A

V

= 10V

GS

2.0

)
d
e
z

i

l
a

1.5

m

r
o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

20

ID= 75A

)
V

(

16

e
g
a

t

l
o
V

e

12

c

r
u
o
S

­o

t

8

­e

t
a

G
,

S

4

G

V

0

0 40 80 120 160 200 240 280

VDS= 60V

VDS= 38V
VDS= 17V

Q

Total Gate Charge (nC)

G

)
F
p

(
e

c
n
a

t

i
c
a
p
a

C
,

C

Fig 3. Typical Transfer Characteristics

16000

12000

8000

4000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

C

C

iss

rss

oss

= C

= C

+ Cgd, C

gs

gd

+ C

ds

SHORTED

ds

gd

Ciss

Coss
Crss

VDS, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

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