International Rectifier IRFP2907 Datasheet
AUTOMOTIVE MOSFET
PD -93906A
IRFP2907
HEXFET® Power MOSFET
Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
D
V
= 75V
DSS
R
DS(on)
= 4.5mΩ
ID = 209A
S
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
®
Power MOSFETs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 209
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 148 A
I
DM
PD @TC = 25°C Power Dissipation 470 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 840
Linear Derating Factor 3.1 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 1970 mJ
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.32
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
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IRFP2907
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 2320 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 75 –– – –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 3.6 4.5 mΩ VGS = 10V, ID = 125A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 130 ––– ––– S VDS = 25V, ID = 125A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 410 620 ID = 125A
Gate-to-Source Charge ––– 92 140 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 140 210 VGS = 10V
Turn-On Delay Time ––– 23 ––– VDD = 38V
Rise Time ––– 190 ––– ID = 125A
Turn-Off Delay Time ––– 130 ––– RG = 1.2Ω
ns
Fall Time ––– 130 ––– VGS = 10V
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 13000 ––– VGS = 0V
Output Capacitance ––– 2100 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 500 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 9780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1360 ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
209
840
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 125A, VGS = 0V
Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 125A
Reverse RecoveryCharge – –– 880 1320 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.25mH
J
= 125A. (See Figure 12).
AS
≤ 125A, di/dt ≤ 260A/µs, V
DD
≤ V
(BR)DSS
as C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
,
Limited by T
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
avalanche performance.
G
G
.
D
S
D
S
IRFP2907
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
4.5V
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
209A
I =
D
°
T = 175 C
J
100
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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