International Rectifier IRFP260N Datasheet
IRFP260N
HEXFET® Power MOSFET
10/11/00
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
I
DM
Pulsed Drain Current 200
PD @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 560 mJ
I
AR
Avalanche Current 50 A
E
AR
Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 10 V/ns
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.50
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
V
DSS
= 200V
R
DS(on)
= 0.04Ω
ID = 50A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
TO-247AC
PD - 94004A
IRFP260N
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
t
rr
Reverse Recovery Time ––– 268 402 ns TJ = 25°C, IF = 28A
Q
rr
Reverse Recovery Charge ––– 1.9 2.8 µC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
50
200
A
Starting T
J
= 25°C, L = 1.5mH
RG = 25Ω, I
AS
= 28A.
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
I
SD
≤ 28A, di/dt ≤ 486A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 28A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 27 ––– ––– S VDS = 50V, ID = 28A
––– ––– 25
µA
VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 234 ID = 28A
Q
gs
Gate-to-Source Charge ––– ––– 38 nC VDS = 160V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 110 VGS = 10V
t
d(on)
Turn-On Delay Time ––– 17 ––– VDD = 100V
t
r
Rise Time ––– 60 ––– ID = 28A
t
d(off)
Turn-Off Delay Time ––– 55 ––– RG = 1.8Ω
t
f
Fall Time ––– 48 ––– VGS = 10V
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 4057 ––– VGS = 0V
C
oss
Output Capacitance ––– 603 ––– pF VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 161 ––– ƒ = 1.0MHz
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
IRFP260N
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0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 175 C
J
°
T = 25 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
50A
Fig 4. Normalized On-Resistance
Vs. Temperature
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