International Rectifier IRFP23N50L Datasheet
PD - 94230
SMPS MOSFET
IRFP23N50L
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
I
DM
PD @TC = 25°C Power Dissipation 370 W
V
GS
dv/dt Peak Diode Recovery dv/dt 14 V/ns
T
J
T
STG
Pulsed Drain Current 92
Linear Derating Factor 2.9 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
t
rr
Q
I
RRM
t
on
SD
rr
Continuous Source Current ––– ––– 23 MOSFET symbol
(Body Diode) showing the
Pulsed Source Current ––– ––– 92 integral reverse
(Body Diode) p-n junction diode.
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current ––– 7.6 11 A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters l All Zero Voltage Switching
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V
DSS
R
DS(on)
typ. Trr typ. I
500V 0.190Ω 170ns 23A
TO-247AC
°C
A
––– 170 250 TJ = 25°C I
––– 220 330 TJ = 125°C di/dt = 100A/µs
––– 560 840 nC TJ = 25°C
––– 980 1500 nC TJ = 125°C
ns
= 23A
F
G
D
D
S
11/28/01
IRFP23N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.190 0.235 Ω VGS = 10V, ID = 14A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 50
––– ––– 2V
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 500V, VGS = 0V
DS
= 400V, VGS = 0V, TJ = 125°C
DS
= 30V
GS
VGS = -30V
Forward Transconductance 12 ––– ––– SVDS = 50V, ID = 14A
Total Gate Charge ––– ––– 150 ID = 23A
Gate-to-Source Charge ––– ––– 44 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 72 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 26 ––– VDD = 250V
Rise Time ––– 94 ––– ID = 23A
Turn-Off Delay Time ––– 53 ––– RG = 6.0Ω
ns
Fall Time ––– 45 ––– VGS = 10V,See Fig. 10
Input Capacitance ––– 3600 ––– VGS = 0V
Output Capacitance ––– 380 ––– VDS = 25V
Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 4800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 100 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Single Pulse Avalanche Energy ––– 410 mJ
Avalanche Current ––– 23 A
Repetitive Avalanche Energy ––– 37 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
I
= 23A, dv/dt = 14V/ns (See Figure 12a)
AS
I
≤ 23A, di/dt ≤ 430A/µs, V
SD
TJ ≤ 150°C
Junction-to-Case ––– 0.34
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
= 25°C, L = 1.5mH, RG = 25Ω,
J
≤ V
DD
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
2 www.irf.com
IRFP23N50L
(
)
100
10
1
0.1
, Drain-to-Source Current (A)
0.01
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
BOTTOM 4.5V
1
, Drain-to-Source Current (A)
D
I
4.5V
20µs PULSE WIDTH
Tj = 150°C
0.1
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
23A
I =
D
)
(Α
2.5
TJ = 25°C
100.00
TJ = 150°C
10.00
, Drain-to-Source Current
D
I
1.00
1.0 6.0 11.0 16.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
C
10V
GS
°
Vs. Temperature
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