International Rectifier IRFP22N50A Datasheet
PD- 91833C
SMPS MOSFET
IRFP22N50A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 22
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A
I
DM
PD @TC = 25°C Power Dissipation 277 W
V
GS
dv/dt Peak Diode Recovery dv/dt 4.8 V/ns
T
J
T
STG
Pulsed Drain Current 88
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
R
DS(on)
max I
500V 0.23Ω 22A
TO-247AC
°C
D
Typical SMPS Topologies
l Full Bridge Converters
l Power Factor Correction Boost
Notes through are on page 8
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12/15/99
IRFP22N50A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 264 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 500 – –– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– – –– 0.23 Ω VGS = 10V, ID = 13A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 13A
Total Gate Charge ––– ––– 120 ID = 22A
Gate-to-Source Charge ––– ––– 32 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 52 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 26 ––– VDD = 250V
Rise Time ––– 94 ––– ID = 22A
Turn-Off Delay Time ––– 47 ––– RG = 4.3Ω
ns
Fall Time ––– 47 ––– RD = 11Ω,See Fig. 10
Input Capacitance ––– 3450 – –– VGS = 0V
Output Capacitance ––– 513 ––– VDS = 25V
Reverse Transfer Capacitance ––– 27 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 4935 – –– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 137 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 1180 mJ
Avalanche Current ––– 22 A
Repetitive Avalanche Energy ––– 28 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1. 5 V TJ = 25°C, IS = 22A, VGS = 0V
Reverse Recovery Time ––– 570 850 ns TJ = 25°C, IF = 22A
Reverse RecoveryCharge ––– 6.1 9.2 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
22
88
showing the
A
p-n junction diode.
G
D
S
IRFP22N50A
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
22A
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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