International Rectifier IRFP064V Datasheet
PD - 94112
IRFP064V
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
D
R
DS(on)
V
DSS
= 60V
= 5.5mΩ
ID = 130A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
TO-247AC
mounting hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 95 A
I
DM
PD @TC = 25°C Power Dissipation 250 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.7 V/ns
T
J
T
STG
Pulsed Drain Current 520
Linear Derating Factor 1.7 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 130 A
Repetitive Avalanche Energy 25 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 0.60
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
3/30/01
IRFP064V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 60 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.067 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance – –– ––– 5.5 mΩ VGS = 10V, ID = 78A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 88 ––– ––– S VDS = 25V, ID = 78A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 260 ID = 130A
Gate-to-Source Charge ––– ––– 68 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– – –– 94 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 26 ––– VDD = 30V
Rise Time ––– 200 ––– ID = 130A
Turn-Off Delay Time ––– 100 ––– RG = 4.3Ω
ns
Fall Time ––– 150 ––– VGS = 10V, See Fig. 10
5.0
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 6760 ––– VGS = 0V
Output Capacitance ––– 1330 ––– VDS = 25V
Reverse Transfer Capacitance ––– 29 0 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1880310 mJ I
= 130A, L = 37µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
130
520
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 130A, VGS = 0V
Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 130A
Reverse Recovery Charge ––– 360 540 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
= 25°C, L = 260µH
J
= 50A. (See Figure 12)
AS
≤ 130A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
,
junction temperature. Package limitation current is 90A.
= 175°C .
J
2 www.irf.com
D
S
IRFP064V
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
70A
I =
D
2.5
°
T = 175 C
J
100
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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