International Rectifier IRFP064N Datasheet
PD - 9.1383A
TO-247AC
IRFP064N
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
@ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
I
D
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 390
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 480 mJ
Avalanche Current 59 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
D
R
DS(on)
V
DSS
= 55V
= 0.008Ω
ID = 110A
S
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
Parameter Typ. Max. Units
8/25/97
IRFP064N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.057 –– – V/° C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.008 Ω VGS = 10V, ID = 59A
Gate Threshold Voltage 2.0 – –– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 42 ––– ––– S VDS = 25V, ID = 59A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 170 ID = 59A
Gate-to-Source Charge ––– ––– 32 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 74 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 100 ––– ID = 59A
Turn-Off Delay Time ––– 43 ––– RG = 2.5Ω
ns
Fall Time ––– 70 ––– RD = 0.39Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
5.0
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 4000 ––– VGS = 0V
Output Capacitance ––– 1300 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 59A, VGS = 0V
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 59A
Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 190µH
= 59A. (See Figure 12)
AS
≤ 59A, di/dt ≤ 290A/µs, V
DD
≤ V
(BR)DSS
,
Uses IRF3205 data and test conditions
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
110
390
showing the
p-n junction diode.
D
G
S
IRFP064N
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
D
I , Drain-to-Sou rce C urrent (A )
4.5V
20µs PULSE WIDTH
T = 25 ° C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
4.5V
D
I , D rain -to-S ourc e Current (A)
20µs PULSE WIDTH
T = 175°C
A
10
0.1 1 10 100
V , Drain-to-So urc e V oltag e (V)
DS
C
A
Fig 2. Typical Output Characteristics
2.0
I = 98A
D
T = 25°C
J
T = 175°C
100
10
D
I , Dra in - to -Sou rce Current (A)
1
45678910
V , Ga te-to-Source Voltage (V )
GS
J
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm a lized)
0.5
DS(on)
R , Dr ain -to-S ou rc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em perat u re ( °C )
J
V = 1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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