International Rectifier IRFP054V Datasheet
IRFP054V
HEXFET® Power MOSFET
3/30/01
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.85
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
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V
DSS
= 60V
R
DS(on)
= 9.0mΩ
ID = 93A
S
D
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
PD - 94110
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 93
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 A
I
DM
Pulsed Drain Current 360
PD @TC = 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 90 A
E
AR
Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt 4.7 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
TO-247AC
IRFP054V
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 90A, VGS = 0V
t
rr
Reverse Recovery Time ––– 78 120 ns TJ = 25°C, IF = 64A
Q
rr
Reverse Recovery Charge ––– 250 380 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
93
360
A
Starting T
J
= 25°C, L = 54µH
RG = 25Ω, I
AS
= 90A, VGS=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
I
SD
≤ 90A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
This is tested with same test conditions as the existing data sheet
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 –– – – –– V VGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.066 –– – V/°C Reference to 25°C, ID = 1mA
R
DS(on)
Static Drain-to-Source On-Resistance –– – ––– 9.0 mΩ VGS = 10V, ID = 54A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 61 ––– ––– S VDS = 25V, ID = 54A
––– ––– 25
µA
VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 170 ID = 64A
Q
gs
Gate-to-Source Charge ––– ––– 39 nC VDS = 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 59 VGS = 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 22 –– – VDD = 30V
t
r
Rise Time ––– 160 ––– ID = 64A
t
d(off)
Turn-Off Delay Time ––– 77 ––– RG = 6.2Ω
t
f
Fall Time ––– 110 ––– VGS = 10V, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 4080 ––– VGS = 0V
C
oss
Output Capacitance ––– 840 ––– VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy ––– 1080220 mJ I
AS
= 90A, L = 54µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRFP054V
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
70A
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