International Rectifier IRFP048N Datasheet
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
PD - 9.1409A
IRFP048N
HEXFET® Power MOSFET
D
V
= 55V
DSS
DS(on)
I
D
= 0.016Ω
= 64A
R
G
S
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
@ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
I
D
I
DM
PD @TC = 25°C Power Dissipation 140 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 210
Linear Derating Factor 0.90 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 270 mJ
Avalanche Current 32 A
Repetitive Avalanche Energy 14 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.1
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient ––– 40
°C
8/25/97
IRFP048N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– – –– 0.016 Ω VGS = 10V, ID = 37A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 32A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 89 ID = 32A
Gate-to-Source Charge ––– ––– 20 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 28V
Rise Time ––– 78 ––– ID = 32A
Turn-Off Delay Time ––– 32 ––– RG = 5.1Ω
ns
Fall Time ––– 48 ––– RD = 0.85Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
5.0
––– –––
13
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1900 ––– VGS = 0V
Output Capacitance ––– 620 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 2 70 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V
Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 32A
Reverse RecoveryCharge ––– 360 540 nC di/dt = 100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 530µH
= 32A. (See Figure 12)
AS
≤ 32A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
Uses IRFZ48N data and test conditions
,
45
210
showing the
A
p-n junction diode.
D
G
S
IRFP048N
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTT OM 4.5V
10
1
D
I , Drain-to-Sou rce C urrent (A )
4.5V
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25° C
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTT OM 4.5V
10
4.5V
1
D
I , D rain -to-S ourc e Current (A)
20µs P ULSE W I DTH
T = 175°C
A
0.1
0.1 1 10 100
V , Drain-to-So urc e V oltag e (V)
DS
C
A
Fig 2. Typical Output Characteristics
2.5
I = 53A
D
100
10
T = 175°C
J
T = 25°C
J
2.0
1.5
1.0
(No rm a lized)
1
D
I , Dr a in -to -So urce Curren t (A)
0.1
45678910
V , Ga te-to-Source Voltage (V )
GS
V = 25 V
DS
20µs PULSE WIDTH
A
0.5
DS(on)
R , Dr ain -to-S ou rc e O n R e si stan ce
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em peratu r e (° C)
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10V
GS
A
Loading...