International Rectifier IRFNG50 Datasheet
Provisional Data Sheet No. PD-9.1556
Next Data SheetIndex
Previous Datasheet
To Order
®
HEXFET
1000 Volt, 2.0
POWER MOSFET
ΩΩ
Ω HEXFET
ΩΩ
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFNG50
N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFNG50 1000V 2. 0Ω 5.5A
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
Absolute Maximum Ratings
Parameter IRFNG50 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 3.5
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 1.0
T
J
T
STG
Pulsed Drain Current ➀ 22
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 860 mJ
Avalanche Current ➀ 5.5 A
Repetitive Avalanche Energy ➀ 15.0 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 2.6 (typical) g
(for 5 seconds)
A
V/ns
o
C
IRFNG50 Device
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 1000 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 1.4 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 2.0 VGS = 10V, ID = 3.5A
On-State Resistance — — 2.25 Ω VGS = 10V, ID = 5.5A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 5.2 — — S ( )VDS > 15V, IDS = 3.5A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 87 — 20 0 VGS =10V, ID = 5.5A
Gate-to-Source Charge 8.7 — 20 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 49 — 1 10 see figures 6 and 13
Turn-On Delay T ime — — 30 VDD = 500V, ID = 5.5A,
Rise Time — — 44 RG = 2.35Ω, VGS = 10V
Turn-Off Delay Time — — 210
Fall Time — — 60 see figure 10
Internal Drain Inductance — 2 .0 —
Internal Source Inductance — 6 .5 —
Input Capacitance — 2400 — VGS = 0V, VDS = 25V
Output Capacitance — 240 — f = 1.0 MHz
Reverse Transfer Capacitance — 80 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 5.5 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ ——22 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 5.5A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 1200 ns Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 8.4 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJPCB
Junction-to-Case — — 0.83
Junction-to-PC Board — TBD — K/W Soldered to a copper clad PC board
A
≤ 50V ➃
DD
Loading...