International Rectifier IRFN450 Datasheet
Provisional Data Sheet No. PD-9.418A
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®
HEXFET
500 V olt, 0.415
POWER MOSFET
ΩΩ
Ω HEXFET
ΩΩ
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter temperature stability . They are well-suited for applications such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology . The SMD-1 will give designers the extra flexibility they need to increase circuit board density . International Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing
thermal and electrical performance.
IRFN450
N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) I D
IRFN450 500V 0.415Ω 12A
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V , TC = 25°C Continuous Drain Current 12.0
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 8.0
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 3.5
T
J
T
STG
Parameter IRFN450 Units
A
Pulsed Drain Current ➀ 48
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 750 mJ
Avalanche Current ➀ 12.0 A
Repetitive Avalanche Energy ➀ 15.0 mJ
V/ns
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 2.6 (typical) g
(for 5 seconds)
o
C
IRFN450 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 0.415 VGS = 10V, ID = 8A
On-State Resistance — — 0.515 Ω VGS = 10V, ID = 12A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 5.5 — — S ( )VDS > 15V, IDS = 8A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 55 — 120 VGS =10V, ID = 12A
Gate-to-Source Charge 5 .0 — 19 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 27 — 70 see figures 6 and 13
Turn-On Delay Time — — 35 VDD = 250V , ID = 12A,
Rise Tim e — — 190 RG = 2.35Ω, VGS = 10V
Turn-Off Delay Time — — 170
Fall Time — — 130 see figure 10
Internal Drain Inductance — 2.0 —
Internal Source Inductance — 6.5 —
Input Capacitance — 2700 — VGS = 0V, VDS = 25V
Output Capacitance — 600 — f = 1.0 MHz
Reverse Transfer Capacitance — 240 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 12 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ —— 48 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.7 V Tj = 25°C, IS = 12A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 1600 ns Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 14 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.83
Junction-to-PC Board — TBD — K/W Soldered to a copper clad PC board
A
≤ 50V ➃
DD
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