International Rectifier IRFN3710 Datasheet
Provisional Data Sheet No. PD-9.1417
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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
100 Volt, 0.028
Generation 5 HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design for which HEXFETs
are well known, provides the designer with an extremely efficient device for use in a wide variety of
applications.
The Surface Mount Device 1 (SMD-1) package represents anothther step in the continual evolution of
surface mount technology. Designed to be a close
replacement for the TO-3 package, the SMD-1 will
give designers the extra flexibility they need to increase circuit board density . International Rectifier has
engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electical performance.
®
TRANSIST OR
ΩΩ
Ω, HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
IRFN3710 100V 0.028Ω 45A
Features:
n Surface Mount
n Small Footprint
n Alternative to TO-3 Package
n Hermetically Sealed
n Avalanche Energy Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Lightweight
IRFN3710
N-CHANNEL
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 28
I
DM
PD @ TC = 25°C Max. Power Dissipation 125 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0
T
J
T
STG
Parameter IRFN3710 Units
A
Pulsed Drain Current 180
Linear Derating Factor 1.0 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 690 mJ
Avalanche Current 27 A
Repetitive Avalanche Energy 12.5 mJ
V/ns
Operating Junction -55 to 150
Storage T emperature Range
Package Mounting Surface Temperature 300 (for 5 sec.)
Weight 2.6 (typical) g
o
C
IRFN3710 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
DSS
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemp. Coefficient of Breakdown Voltage — 0.120 — V/°C Reference to 25°C, ID = 1.0 mA
Static Drain-to-Source — — 0.028 VGS = 12V, ID =28A
On-State Resistance — — 0.032
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 250 mA
Forw ard T ransconductance 24 — — S ( )VDS > 15V, IDS = 28A
Zero Gate Voltage Drain Current — — 25
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 190 VGS =10V, ID =45 A
Gate-to-Source Charge — — 26 nC VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 82
Turn-On Delay Time — 14 — VDD = 50V, ID =45A,
Rise Time — 59 — ns RG = 4.3Ω
Turn-Off Delay Time — 58 —
Fall Time — 48 —
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Ω
VDS=0.8 x Max Rating,VGS=0V
µA
nA
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
nH
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 12V, ID = 45A
VGS = 0V, TJ = 125°C
VGS = 20V
Modified MOSFET
symbol showing the
internal inductances.
C
iss
C
oss
C
rss
Input Capacitance — 3000 — VGS = 0V, VDS = 25V
Output Capacitance — 640 — pF f = 1.0 MHz
Reverse Transfer Capacitance — 330 —
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