International Rectifier IRFN240 Datasheet

Provisional Data Sheet No. PD-9.1548
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®
HEXFET
200 V olt, 0.18
POWER MOSFET
ΩΩ
HEXFET
ΩΩ
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­cient geometry achieves very low on-state resistance com­bined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical param­eter temperature stability . They are well-suited for appli­cations such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology . The SMD-1 will give designers the extra flex­ibility they need to increase circuit board density . Inter­national Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increas­ing the size of the termination pads, thereby enhancing thermal and electrical performance.
IRFN240
N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) I D
IRFN240 200V 0.18 18A
Features:
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Surface Mount
Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V , TC = 25°C Continuous Drain Current 18
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 11
I
DM
PD @ TC = 25°C Max. Power Dissipation 125 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0
T
J
T
STG
Parameter IRFN240 Units
A
Pulsed Drain Current 72
Linear Derating Factor 1.0 W/K Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 450 mJ Avalanche Current 18 A Repetitive Avalanche Energy 12.5 mJ
V/ns
Operating Junction -55 to 150 Storage Temperature Range
Package Mounting Surface Temperature 300 Weight 2.6 (typical) g
(for 5 seconds)
o
C
IRFN240 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
BV R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 1.0 mA
/TJTemperature Coefficient of Breakdown 0.29 V/°C Reference to 25°C, ID = 1.0 mA
Voltage Static Drain-to-Source 0.18 VGS = 10V, ID = 11A On-State Resistance 0.25 VGS = 10V, ID = 18A Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 6.1 S ( )VDS > 15V, IDS = 11A Zero Gate Voltage Drain Current 25 VDS = 0.8 x Max Rating,VGS = 0V
250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward 100 VGS = 20V Gate-to-Source Leakage Reverse -100 VGS = -20V Total Gate Charge 32 60 VGS =10V, ID = 18A Gate-to-Source Charge 2 .2 10.6 VDS = Max. Rating x 0.5 Gate-to-Drain (“Miller”) Charge 14.2 37.6 see figures 6 and 13 Turn-On Delay Time 20 VDD = 100V , ID = 18A, Rise Tim e 152 RG = 9.1, VGS = 10V Turn-Off Delay Time 58 Fall Time 67 see figure 10 Internal Drain Inductance 2.0
Internal Source Inductance 6 . 5
Input Capacitance 1300 VGS = 0V, VDS = 25V Output Capacitance 400 f = 1.0 MHz Reverse Transfer Capacitance 130 see figure 5
µA
nA
nC
ns
Measured from the drain lead, 6mm (0.25 in.) from package to center of die.
nH
Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET symbol showing the internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) 18 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) —— 72 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage 1. 5 V Tj = 25°C, IS = 18A, VGS = 0V
SD
t
Reverse Recovery Time 500 ns Tj = 25°C, IF = 18A, di/dt 100A/µs
rr
Q
Reverse Recovery Charge 5. 3 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case 1.0 Junction-to-PC Board TBD — K/W Soldered to a copper clad PC board
A
≤ 50V
DD
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