International Rectifier IRFN054 Datasheet
Provisional Data Sheet No. PD-9.1543A
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®
HEXFET
60 V olt, 0.020
POWER MOSFET
ΩΩ
Ω HEXFET
ΩΩ
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFN054
N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFN054 60V 0.020Ω 55A*
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
Absolute Maximum Ratings
Parameter IRFN054 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 55*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 40
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.5
T
J
T
STG
Pulsed Drain Current ➀ 256
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 480 mJ
Avalanche Current ➀ 55 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 2.6 (typical) g
(for 5 seconds)
A
V/ns
o
C
IRFN054 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.68 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.020 VGS = 10V, ID = 40A
On-State Resistance — — 0.031 Ω VGS = 10V, ID = 55A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 20 — — S ( )VDS > 15V, IDS = 40A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 39 — 88 VGS =10V, ID = 55A
Gate-to-Source Charge 2 0 — 45 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 34 — 105 see figures 6 and 13
Turn-On Delay T ime — — 33 VDD = 30V , ID = 55A,
Rise Time — — 180 RG = 2.35Ω, VGS = 10V
Turn-Off Delay Time — — 100
Fall Time — — 100 see figure 10
Internal Drain Inductance — 2 .0 —
Internal Source Inductance — 4 . 1 —
Input Capacitance — 1660 — VGS = 0V, VDS = 25V
Output Capacitance — 2000 — f = 1.0 MHz
Reverse Transfer Capacitance — 340 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 55 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 256 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 2.5 V Tj = 25°C, IS = 55A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 280 ns Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 2.2 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.83
Junction-to-PC Board — TBD — K/W Soldered to a copper clad PC board
A
≤ 50V ➃
DD
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