International Rectifier IRFN044 Datasheet
Product Summary
Part Number BVDSS RDS(on) ID
IRFN044 60V 0.040Ω 44A
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
N-CHANNEL
Provisional Data Sheet No. PD-9.1545
60 V olt, 0.040
ΩΩ
ΩΩ
Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFN044
HEXFET
®
POWER MOSFET
Absolute Maximum Ratings
Parameter IRFN044 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 44
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 27
I
DM
Pulsed Drain Current ➀ 176
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/K ➄
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 340 mJ
I
AR
Avalanche Current ➀ 44 A
E
AR
Repetitive Avalanche Energy ➀ 12.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 4.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Package Mounting Surface Temperature 300
(for 5 seconds)
Weight 2.6 (typical) g
o
C
A
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
Junction-to-Case — — 1.0
R
thJ-PCB
Junction-to-PC Board — TBD — K/W Soldered to a copper clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
S
Continuous Source Current (Body Diode) — — 44 Modified MOSFET symbol showing the
I
SM
Pulse Source Current (Body Diode) ➀ — — 176 integral reverse p-n junction rectifier.
V
SD
Diode Forward Voltage — — 2.5 V Tj = 25°C, IS = 44A, VGS = 0V ➃
t
rr
Reverse Recovery Time — — 22 0 ns Tj = 25°C, IF = 44A, di/dt ≤ 100A/µs
Q
RR
Reverse Recovery Charge — — 1.6 µCV
DD
≤ 50V ➃
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0 mA
∆BV
DSS
/∆TJTemperature Coefficient of Breakdown — 0.68 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
R
DS(on)
Static Drain-to-Source — — 0.040 VGS = 10V, ID = 27A
On-State Resistance — — 0.050 Ω VGS = 10V, ID = 44A
V
GS(th)
Gate Threshold Voltage 2.0 — 4 .0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 17 — — S ( )VDS > 15V, IDS = 27A ➃
I
DSS
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
I
GSS
Gate-to-Source Leakage Forward — — 100 VGS = 20V
I
GSS
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Q
g
Total Gate Charge 39 — 88 VGS =10V, ID = 44A
Q
gs
Gate-to-Source Charge 6.7 — 15 VDS = Max. Rating x 0.5
Q
gd
Gate-to-Drain (“Miller”) Charge 18 — 52 see figures 6 and 13
t
d(on)
Turn-On Delay Time — — 23 VDD = 30V , ID = 44A,
t
r
Rise Time — — 130 RG = 9.1Ω, VGS = 10V
t
d(off)
Turn-Off Delay Time — — 81
t
f
Fall Tim e — — 79 see figure 10
L
D
Internal Drain Inductance — 2. 0 —
L
S
Internal Source Inductance — 4.1 —
C
iss
Input Capacitance — 2400 — VGS = 0V, VDS = 25V
C
oss
Output Capacitance — 1100 — f = 1.0 MHz
C
rss
Reverse Transfer Capacitance — 2 30 — see figure 5
IRFN044 Device
Ω
➃
µA
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
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