International Rectifier IRFM260 Datasheet

Provisional Data Sheet No. PD-9.1388A

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REPETITIVE AVALANCHE AND dv/dt RATED IRFM260

HEXFET

®

TRANSISTOR

N-CHANNEL

200Volt, 0.060

ΩΩ

Ω, HEXFET

ΩΩ

HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran­sistors. The efficient geometry design achiev es very

Product Summary

Part Number BVDSS RDS(on) ID

IRFM260 200V 0.060Ω 35A*

low on-state resistance combined with high
transconductance.

HEXFET transistors also feature all of the well-es­tablished advantages of MOSFETs, such as volt­age control, very fast switching, ease of paralleling
and electrical parameter temperature stability . They
are well-suited for applications such as switching

Features:

n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelet

power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re­quired.

HEXFET transistor’s totally isolated package elimi­nates the need for additional isolating material be­tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter IRFM260 Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 35*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current 28

I

DM

PD @ TC = 25°C Max. Power Dissipation 250 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  4.3

T

J

T

STG

Pulsed Drain Current  180

Linear Derating Factor 2.0 W/K 
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy  700 mJ
Avalanche Current  35 A
Repetitive Avalanche Energy  25 m J

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature
Weight 9.3 (typical) g

300(0.063 in.(1.6mm) from case for 10s)

Pre-Radiation

A

V/ns

o

C

IRFM260

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

(on)

d

t

r

t

(off)

d

t

f

L

D

L

S

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdow n — 0.24 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source — — 0.060 VGS = 10V, ID = 28A
On-State Resistance — — 0.068
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Tr ansconductance 22 — — S ( )VDS > 15V, IDS = 28A 
Zero Gate Voltage Drain Current — — 25 VDS= 0.8 x Max Rating,VGS=0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20 V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 230 VGS = 10V, ID = 35A
Gate-to-Source Charge — — 40 nC VDS = Max Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 110
Tur n-On Delay Time — — 29 VDD = 100V, ID = 35A,
Rise Time — — 120 RG = 2.35Ω
Tur n-Off Delay Time — — 110
Fall Time — — 92
Internal Drain Inductance — 8.7 —

Internal Source Inductance — 8.7 —

Ω

Ω

µA

nA

ns

Measured from drain lead,
6mm (0.25 in) from package
to center of die.

nH

Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.

VGS = 10V, ID = 35A

VGS = 0V, TJ = 125°C

Modified MOSFET
ing the internal inductances.

symbol show-



C

iss

C

oss

C

rss

Input Capacitance — 5100 — VGS = 0V, VDS = 25 V
Output Capacitance — 1100 — pF f = 1.0MHz
Reverse Transfer Capacitance — 280 —

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 35*

S

I

Pulse Source Current (Body Diode)  — — 180

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 35A, VGS = 0V 

SD

t

Reverse Recovery Time — — 420 ns Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 4.9 µCV

RR

t

Forward Tu r n-On Time

on

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R
R

thCS
thJA

Junction-to-Case — — 0.50
Case-to-Sink — 0.21 — K/W  Mounting surface flat, smooth, and greased
Junction-to-Ambient — — 48 Typical socket mount

Modified MOSFET symbol

A

showing the integral reverse
p-n junction rectifier.

≤ 50V 

DD

IRFM260

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1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

4.5V

D

I , D rain-to-Sou rce C urrent (A )

20µs PULSE WIDTH
T = 25°C

1

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics,

TJ = 25oC

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

D

I , Dra in -to-S ource C urrent (A)

4.5V

20µs PU LSE WIDTH
T = 150°C

A

1

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

J

A

Fig 2. Typical Output Characteristics,

TJ = 150oC

2.5

I = 46A

D

2.0

100

T = 150°C

J

T = 25°C

10

D

I , Dr a in - to -S ou rce Cu r ren t (A)

1

45678910

V , Ga te-to-S o urce Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

J

1.0

(No rm alized)

0.5

V = 50V

DS

20µs PULSE W ID TH

A

DS(on)

R , D rain -to-S o urc e O n Re si stan ce

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Ju nc tio n T em peratu re ( °C )

J

V = 10 V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature