International Rectifier IRFL110 Datasheet
PD - 90861A
IRFL11 0
HEXFET® Power MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
G
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10 V 1.5
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 0.96
I
DM
PD @Tc = 25°C Power Dissipation 3.1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T
J, TSTG
Pulsed Drain Current 12
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
Gate-to-Source Voltage -/+20 V
Single Pulse Avalanche Energy 150 mJ
Avalanche Current 1.5 A
Repetitive Avalanche Energy 0.31 mJ
Junction and Storage Temperature Range -55 to + 150
Soldewring Temperature, for 10 seconds
D
V
DSS
R
DS(on)
S
SOT-223
300 (1.6mm from case)
= 100V
= 0.54Ω
ID = 1.5A
°C
A
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
** When mounted on 1'' square pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Junction-to-PCB ––– 40
Junction-to-Ambient. (PCB Mount)** –– – 60
°C/W
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IRFL110
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
tf Fall Time ––– 9.4 ––– RD = 8.4 Ω, See Fig. 10
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.54 Ω VGS = 10V, ID = 0.90A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.1 ––– ––– S VDS = 50V, ID = 0.90A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
VDS = 100V, VGS = 0V
µA
VGS = 20V
nA
Total Gate Charge ––– ––– 8.3 ID = 5.6A
Gate-to-Source Charge ––– ––– 2.3 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– –– – 3.8 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 6.9 ––– VDD = 50V
Rise Time ––– 16 –––
Turn-Off Delay Time ––– 15 –– – RG = 24 Ω
Internal Drain Inductance
Internal Source Inductance
––– 4.0 –––
––– 6.0 –––
ID = 5.6A
ns
Between lead, 6mm(0.25in)
nH
from package and center
of die contact.
Input Capacitance ––– 180 ––– VGS = 0V
Output Capacitance –– – 81 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 15 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
1.5
A
12
Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 1.5A, VGS = 0V
Reverse Recovery Time ––– 100 200 ns TJ = 25°C, IF = 5.6A
Reverse RecoveryCharge ––– 0.44 0.88 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
25V, starting TJ = 25°C, L = 25 mH
DD=
RG = 25Ω, I
= 3.0A (See Figure 12)
AS
I
≤ 5.6A, di/dt ≤ 75A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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