International Rectifier IRFL1006 Datasheet
PD - 91876
IRFL1006
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
G
D
V
= 60V
DSS
R
DS(on)
= 0.22Ω
ID = 1.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.3
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.3
I
DM
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 6.4
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 54 mJ
Avalanche Current 1.6 A
Repetitive Avalanche Energy* 0.1 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
R
θJA
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Junction-to-Amb. (PCB Mount, steady state)* 90 120
Junction-to-Amb. (PCB Mount, steady state)** 50 60
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S
SOT-223
A
°C/W
3/29/99
IRFL1006
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.22 Ω VGS = 10V, ID = 1.6A
Gate Threshold Voltage 2.0 – –– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.0 ––– ––– S VDS = 25V, ID = 1.6A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 8.0 ID = 1.6A
Gate-to-Source Charge ––– – –– 1.7 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 3.3 VGS = 10V, See Fig. 6 and 9
Turn-On Delay Time ––– 7.4 ––– VDD = 30V
Rise Time ––– 18 ––– ID = 1.6A
Turn-Off Delay Time ––– 18 ––– RG = 49Ω
ns
Fall Time ––– 17 ––– RD = 19Ω, See Fig. 10
Input Capacitance ––– 160 ––– VGS = 0V
Output Capacitance ––– 55 –– – pF VDS = 25V
Reverse Transfer Capacitance ––– 19 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
1.6
––– ––– 6.4
A
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 1.6A, VGS = 0V
Reverse Recovery Time ––– 31 47 ns TJ = 25°C, IF = 1.6A
Reverse RecoveryCharge ––– 46 68 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 42 mH
J
= 1.6A. (See Figure 12)
AS
I
≤ 1.6A, di/dt ≤ 260A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
2 www.irf.com
IRFL1006
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
10
T = 25 C
J
J
°
T = 150 C
J
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
°
2.0
I =
D
1.6A
1.5
1
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
V = 25V
DS
0.1
4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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