International Rectifier IRFL024N Datasheet
PD - 91861A
IRFL024N
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
G
D
R
S
SOT -223
V
DSS
DS(on)
ID = 2.8A
= 55V
= 0.075Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.0
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.8
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.3
I
DM
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 11.2
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 214 mJ
Avalanche Current 2.8 A
Repetitive Avalanche Energy* 0.1 mJ
Junction and Storage Temperature Range -55 to + 150 °C
A
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
R
θJA
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Junction-to-Amb. (PCB Mount, steady state)* 90 120
Junction-to-Amb. (PCB Mount, steady state)** 50 60
°C/W
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6/15/99
IRFL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 2.8A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.0 ––– ––– S VDS = 25V, ID = 1.68A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 18.3 ID = 1.68A
Gate-to-Source Charge ––– ––– 3.0 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 7.7 VGS = 10V, See Fig. 6 and 9
Turn-On Delay Time ––– 8.1 ––– VDD = 28V
Rise Time ––– 13.4 ––– ID = 1.68A
Turn-Off Delay Time ––– 22.2 ––– RG = 24Ω
ns
Fall Time ––– 17.7 ––– RD = 17Ω, See Fig. 10
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 145 –– – pF VDS = 25V
Reverse Transfer Capacitance ––– 60 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
2.8
A
11.2
Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS =1.68A, VGS = 0V
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.68A
Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 54.7 mH
J
= 2.8A. (See Figure 12)
AS
I
≤ 1.68A, di/dt ≤ 155A/µs, V
SD
DD
≤ V
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
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IRFL024N
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics,
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics,
2.0
I =
D
2.8A
1.5
10
°
T = 150 C
J
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
1
4.5 5.0 5.5 6.0 6.5
°
T = 25 C
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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