International Rectifier IRFIZ48N Datasheet

PD 9.1407
TO-220 FULLPAK
PRELIMINARY
IRFIZ48N
HEXFET® Power MOSFET
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
D
R
DS(on)
V
DSS
= 0.016
= 55V
ID = 36A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3 6 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 2 5 A I
DM
PD @TC = 25°C Power Dissipation 42 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt T
J
T
STG
Thermal Resistance
R
θJC
R
θJA
Pulsed Drain Current
Linear Derating Factor 0.28 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)




210
270 mJ
32 A
4.2 mJ
5.6 V/ns
Parameter Typ. Max. Units
Junction-to-Case ––– 3.6 Junction-to-Ambient ––– 65
°C
°C/W
IRFIZ48N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/T
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.016 VGS = 10V, ID = 22A Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 32A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V Total Gate Charge ––– ––– 89 ID = 32A Gate-to-Source Charge ––– ––– 20 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 10V, See Fig. 6 and 13 Turn-On Delay Time ––– 11 ––– VDD = 28V Rise Time ––– 78 ––– ID = 32A Turn-Off Delay Time –– – 32 ––– RG = 5.1
ns Fall Time ––– 48 ––– RD = 0.85Ω, See Fig. 10 Internal Drain Inductance
Internal Source Inductance ––– –––
4.5
––– –––
7.5
Between lead, 6mm (0.25in.)
nH
from package
and center of die contact Input Capacitance ––– 1900 ––– VGS = 0V Output Capacitance ––– 620 ––– VDS = 25V Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5
pF


D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25, I
I
SD
TJ ≤ 175°C
Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 32A Reverse RecoveryCharge ––– 360 540 nC di/dt = 100A/µs 
Pulse width ≤ 300µs; duty cycle 2%.
= 25V, starting TJ = 25°C, L = 530µH
= 32A. (See Figure 12)
AS
32A, di/dt 250A/µs, V
DD
V
(BR)DSS
,
t=60s, ƒ=60Hz
Uses IRFZ48N data and test conditions
36
210
showing the
A
p-n junction diode.
D
G
S
IRFIZ48N
A
A
A
A
1000
VGS TOP 15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTTOM 4.5V
10
1
D
I , D rain-to-Source Current (A)
4.5 V
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH T = 25°C
C
Fig 1. Typical Output Characteristics,
TJ = 25oC
1000
1000
VGS TOP 15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
BOTTOM 4.5V
10
4.5V
1
D
I , D rain-to-Source Current (A)
20µs PULSE WIDTH T = 175°C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics,
TJ = 175oC
2.5
I = 53A
D
100
T = 175°C
J
10
1
D
I , Drain-to-Source Current (A)
0.1 45678910
T = 25°C
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 4 0 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10V
GS
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