International Rectifier IRFIZ46N Datasheet

PD - 9.1306A

TO-220 FULLPAK

IRFIZ46N

HEXFET® Power MOSFET

l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

G

D

V

= 55V

DSS

DS(on)

ID = 33A

= 0.020Ω

R

S

utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
I

DM

PD @TC = 25°C Power Dissipation 45 W

V

GS

E

AS

I

AR

E

AR

dv/d t Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  180

Linear Derating Factor 0.3 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy  230 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 4.5 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θJA

Junction-to-Case –––– –––– 3.3
Junction-to-Ambient –––– –––– 65 °C/W

Parameter Min. Typ. Max. Units

8/25/97

IRFIZ46N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.020 Ω VGS = 10V, ID = 19A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 16 ––– ––– S VDS = 25V, ID = 28A

Drain-to-Source Leakage Current

––– ––– 25 VDS = 55V, VGS = 0V

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

µA

nA

Total Gate Charge ––– ––– 61 ID = 28A
Gate-to-Source Charge ––– ––– 13 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 24 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 12 ––– VDD = 28V
Rise Time ––– 80 ––– ID = 28A
Turn-Off Delay Time ––– 43 ––– RG = 12Ω

ns
Fall Time ––– 52 ––– RD = 0.98Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

–––

–––

4.5

7.5

–––

–––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1500 ––– VGS = 0V
Output Capacitance ––– 450 ––– VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

TJ ≤ 175°C

 t=60s, ƒ=60Hz

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 33

––– ––– 180

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 19A, VGS = 0V 
Reverse Recovery Time ––– 72 11 0 n s TJ = 25°C, IF = 28A
Reverse Recovery Charge ––– 210 310 nC di/dt = 100A/µs

 V

DD

RG = 25Ω, I

≤ 28A, di/dt ≤ 240A/µs, V

DD

≤ V

(BR)DSS

,

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Uses IRFZ46N data and test conditions

A

= 25V, starting TJ = 25°C, L = 410µH

= 28A. (See Figure 12)

AS



D

G

S

IRFIZ46N

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

4.5V

D

I , D rain-to-Sou rce C urrent (A )

20µs PULSE WIDTH

T

T = 25°C

J

1

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

D

I , D rain-to-Sou rce C urrent (A )

A

1

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

4.5V

20µs PULSE WI DT H

T

J

T = 175°C

C

A

Fig 2. Typical Output Characteristics

2.5

I = 28 A

D

T = 25°C

100

10

D

I , Dr a in-to - Source Cu rrent ( A)

1

45678910

V , Ga te-to-S o urce Voltage (V )

GS

J

T = 175°C

J

V = 25V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(No rm alized)

0.5

DS(on)

R , D rain -to-S o urc e O n Re si stan ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tion Tempe ratur e ( °C )

J

V = 1 0V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature