International Rectifier IRFIZ34V Datasheet
PD - 94053
IRFIZ34V
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
Advanced HEXFET
®
Power MOSFETs from International
G
D
V
R
DS(on)
= 60V
DSS
= 28mΩ
ID = 20A
S
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to
TO-220 Full-Pak
using a 100 micron mica barrier with standard TO-220
product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A
I
DM
PD @TC = 25°C Power Dissipation 30 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 120
Linear Derating Factor 0.20 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 81 mJ
Avalanche Current 30 A
Repetitive Avalanche Energy 3.0 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
Junction-to-Case ––– 5.0
θJC
R
Junction-to-Ambient ––– 65 °C/W
θJA
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IRFIZ34V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 28 mΩ VGS = 10V, ID = 18A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 15 ––– ––– S VDS = 25V, ID = 18A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 4 9 ID = 30A
Gate-to-Source Charge ––– ––– 12 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 10 ––– VDD = 30V
Rise Time ––– 65 ––– ID = 30A
Turn-Off Delay Time ––– 31 ––– RG = 12Ω
ns
Fall Time ––– 40 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1120 ––– VGS = 0V
Output Capacitance ––– 250 ––– VDS = 25V
Reverse Transfer Capacitance ––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
20
120
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V
Reverse Recovery Time ––– 70 110 ns TJ = 25°C, IF = 30A
Reverse Recovery Charge ––– 99 15 0 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
I
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 180µH
J
= 30A. (See Figure 12)
AS
≤ 30A, di/dt ≤ 250A/µs, V
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ34V data and test conditions
DD
≤ V
(BR)DSS
,
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D
S
IRFIZ34V
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
30A
I =
D
3.0
°
T = 25 C
J
100
T = 175 C
J
10
D
I , Drain-to-Source Current (A)
V = 50V
DS
1
4 5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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