International Rectifier IRFIZ34N Datasheet

PD - 9.1489A

TO-220 FULLPAK

IRFIZ34N

HEXFET® Power MOSFET

l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 21
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
I

DM

PD @TC = 25°C Power Dissipation 37 W

V

GS

E

AS

I

AR

E

AR

dv/d t Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  100

Linear Derating Factor 0.24 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 110 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 3.7 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 4.1
Junction-to-Ambient ––– 65

D

V

R

DS(on)

= 55V

DSS

= 0.04Ω

ID = 21A

S

°C/W

°C

8/25/97

IRFIZ34N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 – –– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 11A 
Gate Threshold Voltage 2.0 – –– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 34 ID = 16A
Gate-to-Source Charge ––– – –– 6.8 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 7.0 ––– VDD = 28V
Rise Time ––– 49 –– – ID = 16A
Turn-Off Delay Time ––– 31 ––– RG = 18Ω

ns
Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 700 ––– VGS = 0V
Output Capacitance ––– 240 ––– VDS = 25V
Reverse Transfer Capacitance ––– 1 00 ––– ƒ = 1.0MHz, See Fig. 5

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 11A, VGS = 0V 
Reverse Recovery Time ––– 5 7 86 ns TJ = 25°C, IF = 16A
Reverse RecoveryCharge ––– 130 200 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 610µH

= 16A. (See Figure 12)

AS

≤ 16A, di/dt ≤ 420A/µs, V

DD

≤ V

(BR)DSS

,

 t=60s, ƒ=60Hz

 Uses IRFZ34N data and test conditions

21

100

showing the

A

p-n junction diode.



D

G

S

IRFIZ34N

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

D

I , D rain-to-Sou rce C urrent (A )

1

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

100

4.5V

20µs PULSE WIDTH

T

J

T = 25°C

C

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

10

4.5V

D

I , D rain-to-Sou rce C urrent (A )

20µs PULSE WIDTH

T

T = 175°C

J

A

1

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

C

A

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.4

I = 2 6A

D

T = 25°C

J

T = 175°C

J

10

D

I , Drain-to-Source C u rrent (A)

1

45678910

V , Gate-to-S o urce Voltage (V)

GS

V = 25V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.6

1.2

(N o r m a lized)

0.8

0.4

DS(on)

R , D rain-to -S ou rce O n R e sista nc e

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tio n T em per atu re ( °C )

J

V = 10V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature