International Rectifier IRFIZ24V Datasheet

PD - 94102
IRFIZ24V
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 10 A I
DM
PD @TC = 25°C Power Dissipation 26 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.2 V/ns T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 0.18 W/°C Gate-to-Source Voltage ± 20 V Avalanche Current 17 A Repetitive Avalanche Energy 4.4 mJ
Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
HEXFET® Power MOSFET
D
R
DS(on)
V
DSS
= 60V
= 0.060
ID = 14A
S
TO-220 FULLPAK
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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03/12/01
IRFIZ24V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 60 m VGS = 10V, ID = 10A Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 7.8 ––– ––– SVDS = 25V, ID = 10A
Drain-to-Source Leakage Current
––– ––– 25 ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V Total Gate Charge ––– ––– 23 ID = 17A Gate-to-Source Charge ––– ––– 7.7 nC VDS = 48V Gate-to-Drain ("Miller") Charge ––– ––– 6.2 VGS = 10V, See Fig. 6 and 13 Turn-On Delay Time ––– 7.6 ––– VDD = 30V Rise Time ––– 46 ––– ID = 17A Turn-Off Delay Time ––– 21 ––– RG = 18
ns
Fall Time ––– 24 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact Input Capacitance ––– 590 ––– VGS = 0V Output Capacitance ––– 140 ––– VDS = 25V Reverse Transfer Capacitance ––– 23 ––– pF ƒ = 1.0MHz, See Fig. 5 Single Pulse Avalanche Energy ––– 140 43 mJ I
= 17A , L = 300µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)
––– –––
––– –––
14
68
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 17A , VGS = 0V Reverse Recovery Time ––– 53 79 ns TJ = 25°C, IF = 17A Reverse Recovery Charge ––– 90 130 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25, I
I
14A, di/dt 240A/µs, V
SD
= 25°C, L = 300µH
J
= 14A. (See Figure 12)
AS
DD
V
(BR)DSS
,
Pulse width 400µs; duty cycle 2%. This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T I
= 17A is copied from TO-220 device.
D
= 175°C .
J
TJ ≤ 175°C
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D
S
IRFIZ24V
100
10
VGS
TOP
15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
T = 25 C
J
J
°
T = 175 C
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
°
2.0
I =
D
17A
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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