PD - 94102
IRFIZ24V
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
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Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 10 A
I
DM
PD @TC = 25°C Power Dissipation 26 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.2 V/ns
T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 0.18 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 17 A
Repetitive Avalanche Energy 4.4 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
D
R
DS(on)
V
DSS
= 60V
= 0.060Ω
ID = 14A
S
TO-220 FULLPAK
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 5.7 °C/W
Junction-to-Ambient ––– 62
03/12/01
IRFIZ24V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 60 mΩ VGS = 10V, ID = 10A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 7.8 ––– ––– SVDS = 25V, ID = 10A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 23 ID = 17A
Gate-to-Source Charge ––– ––– 7.7 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 6.2 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.6 ––– VDD = 30V
Rise Time ––– 46 ––– ID = 17A
Turn-Off Delay Time ––– 21 ––– RG = 18Ω
ns
Fall Time ––– 24 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 590 ––– VGS = 0V
Output Capacitance ––– 140 ––– VDS = 25V
Reverse Transfer Capacitance ––– 23 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 140 43 mJ I
= 17A , L = 300µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
14
68
showing the
A
p-n junction diode.
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Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 17A , VGS = 0V
Reverse Recovery Time ––– 53 79 ns TJ = 25°C, IF = 17A
Reverse Recovery Charge ––– 90 130 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
≤ 14A, di/dt ≤ 240A/µs, V
SD
= 25°C, L = 300µH
J
= 14A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
I
= 17A is copied from TO-220 device.
D
= 175°C .
J
TJ ≤ 175°C
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D
S
IRFIZ24V
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
T = 25 C
J
J
°
T = 175 C
J
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
°
2.0
I =
D
17A
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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