International Rectifier IRFIZ24E Datasheet

PD - 9.1673A

TO-220 FULLPAK

IRFIZ24E

HEXFET® Power MOSFET

l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

G

D

V

= 60V

DSS

DS(on)

= 0.071Ω

R

ID = 14A

S

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.6 A
I

DM

PD @TC = 25°C Power Dissipation 29 W

V

GS

E

AS

I

AR

E

AR

dv/d t Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  68

Linear Derating Factor 0.19 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 71 mJ
Avalanche Current 10 A
Repetitive Avalanche Energy 2.9 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 5.2
Junction-to-Ambient ––– 65

°C/W

°C

9/22/97

IRFIZ24E

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.071 Ω VGS = 10V, ID = 7.8A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.5 ––– ––– S VDS = 25V, ID = 10A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 60V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 2 0 ID = 10A
Gate-to-Source Charge ––– ––– 5.3 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 7.6 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 4.9 ––– VDD = 28V
Rise Time ––– 34 ––– ID = 10A
Turn-Off Delay Time ––– 19 ––– RG = 24Ω

ns
Fall Time ––– 27 ––– RD = 2.6Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 370 ––– VGS = 0V
Output Capacitance ––– 140 ––– VDS = 25V
Reverse Transfer Capacitance ––– 65 – –– ƒ = 1.0MHz, See Fig. 5

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 7.8A, VGS = 0V 
Reverse Recovery Time – – – 56 83 ns TJ = 25°C, IF = 10A
Reverse RecoveryCharge ––– 120 180 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 1.0mH

= 10A. (See Figure 12)

AS

≤ 10A, di/dt ≤ 280A/µs, V

DD

≤ V

(BR)DSS

,

 t=60s, ƒ=60Hz

 Uses IRFZ24N data and test conditions

14

68

showing the

A

p-n junction diode.



D

G

S

IRFIZ24E

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

10

D

I , D ra in-to-Sou rce C urrent (A )

4.5V
20µs PULSE WIDTH

T = 25 ° C

1

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

10

4.5V

D

I , D rain-to-S ourc e C urrent (A)

20µs PUL SE WIDTH
T = 175°C

A

1

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

C

A

Fig 2. Typical Output Characteristics

3.0

I = 17A

D

T = 25°C

J

T = 175°C

J

10

D

I , Dra in -to -S ou rce Current (A)

1

45678910

V , Ga te-to-S o urce Voltage (V )

GS

V = 25V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(No rm alized)

1.0

0.5

DS(on)

R , Drain -to -S ourc e O n R e sista n ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tion Temperatur e ( °C )

J

V = 1 0V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature