International Rectifier IRFIB6N60A Datasheet
PD - 91813
SMPS MOSFET
IRFIB6N60A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.5
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.5 A
I
DM
PD @TC = 25°C Power Dissipation 60 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 37
Linear Derating Factor 0.48 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
600V 0.75W 5.5A
SDG
TO-220 FULLPAK
°C
D
Typical SMPS Topologies:
l Single Transistor Forward
l Active Clamped Forward
Notes through are on page 8
www.irf.com 1
01/12/99
IRFIB6N60A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 96 –– – VGS = 0V, VDS = 0V to 480V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance ––– ––– 0.75 W VGS = 10V, ID = 3.3A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 480V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 5.5 ––– ––– S VDS = 25V, ID = 5.5A
Total Gate Charge ––– ––– 49 ID = 9.2A
Gate-to-Source Charge ––– ––– 13 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 –– – VDD = 300V
Rise Time ––– 25 – –– ID = 9.2A
Turn-Off Delay Time ––– 30 – –– RG = 9.1W
ns
Fall Time ––– 22 ––– RD = 35.5W,See Fig. 10
Input Capacitance ––– 1400 ––– VGS = 0V
Output Capacitance ––– 180 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7.1 – –– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1957 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 49 –– – VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 290 mJ
Avalanche Current ––– 9.2 A
Repetitive Avalanche Energy ––– 6.0 mJ
Parameter Typ. Max. Units
R
Junction-to-Case ––– 2.1
qJC
R
Junction-to-Ambient ––– 65 °C/W
qJA
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
5.5
37
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V
Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 9.2A
Reverse RecoveryCharge ––– 3.0 4 . 4 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com
D
S
IRFIB6N60A
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
4.7V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
J
100
10
D
I , Drain-to-Source Current (A)
1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.7V
4.7V
20µs PULSE WIDTH
°
T = 150 C
J
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
9.2A
2.5
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
www.irf.com 3
Loading...