International Rectifier IRFI9634G Datasheet
PD - 9.1488
PRELIMINARY
l Advanced Process Technology
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
IRFI9634G
HEXFET® Power MOSFET
D
G
S
TO-220 FULLPAK
V
= -250V
DSS
R
DS(on)
ID = -4.1A
= 1.0Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -4.1
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -2.6 A
I
DM
PD @TC = 25°C Power Dissipation 35 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -16
Linear Derating Factor 0.28 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 520 mJ
Avalanche Current -4.1 A
Repetitive Avalanche Energy 3.5 m J
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 3.6
Junction-to-Ambient ––– 65
°C/W
°C
8/8/96
IRFI9634G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Drain-to-Source Breakdown Voltage -250 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.27 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 1.0 Ω VGS = -10V, ID = -2.5A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 2.2 ––– ––– S VDS = -50V, ID = -4.1A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 1 00 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -250V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 38 ID = -4.1A
Gate-to-Source Charge ––– ––– 8.0 nC VDS = -200V
Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = -130V
Rise Time ––– 23 ––– ID = -4.1A
Turn-Off Delay Time ––– 34 ––– RG = 12Ω
ns
Fall Time ––– 21 ––– RD = 31Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 680 ––– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 40 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -6.5 V TJ = 25°C, IS = -4.1A, VGS = 0V
Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = -4.1A
Reverse RecoveryCharge –– – 1.5 2.2 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 150°C
= 25°C, L = 62mH
J
= -4.1A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-4.1
-16
showing the
A
p-n junction diode.
≤ -4.1A, di/dt ≤ -640A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
IRFI9634G
A
A
)
A
A
100
VGS
TOP - 15V
- 10V
- 8. 0V
- 7. 0V
- 6. 0V
- 5. 5V
- 5. 0V
BOTTOM - 4.5V
10
D
-I , Drain -to-S ou rce C urre nt (A )
1
-4.5V
1 10 100
-V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25 °C
c
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
100
VGS
TOP - 15V
- 10V
- 8. 0V
- 7. 0V
- 6. 0V
- 5. 5V
- 5. 0V
BOTTOM - 4.5V
10
D
-I , Drain-to-Source Current (A)
-4.5V
1
1 10 100
-V , Dra in -t o-So u rc e V o ltage (V
DS
20µs PULSE WIDTH
T = 150°C
C
Fig 2. Typical Output Characteristics,
TJ = 150oC
2.5
I = -4.1 A
D
T = 25°C
J
10
D
-I , D rain- to-S o urc e C u rre nt (A )
1
45678910
-V , Ga te-to-Source Voltage (V)
GS
T = 150°C
J
V = -50 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(N ormalized)
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = -1 0V
GS
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