International Rectifier IRFI540N Datasheet

PD - 9.1361A

TO-220 FULLPAK

PRELIMINARY

IRFI540N

HEXFET® Power MOSFET

l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A
I

DM

PD @TC = 25°C Power Dissipation 54 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  110

Linear Derating Factor 0.36 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy  300 mJ
Avalanche Current 16 A
Repetitive Avalanche Current 5.4 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

D

V

= 100V

DSS

R

S

DS(on)

ID = 20A

= 0.052Ω

Thermal Resistance

R
R

θJC
θJA

Parameter Min. Typ. Max. Units

Junction-to-Case –––– –––– 2.8
Junction-to-Ambient –––– –––– 65

°C/W

3/16/98

IRFI540N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.052 Ω VGS = 10V, ID = 11A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 16A

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– ––– 94 ID = 16A
Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 8.2 ––– VDD = 50V
Rise Time ––– 39 ––– ID = 16A
Turn-Off Delay Time ––– 44 ––– RG = 5.1Ω

ns
Fall Time ––– 33 ––– RD = 3.0Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

–––

–––

4.5

7.5

–––

–––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1400 ––– VGS = 0V
Output Capacitance ––– 330 ––– VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 20

––– ––– 110

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V 
Reverse Recovery Time ––– 170 250 ns TJ = 25°C, IF = 16A
Reverse RecoveryCharge ––– 1.1 1.6 µC di/dt = 100A/µs

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 2.0mH

= 16A. (See Figure 12)

AS

≤ 16A, di/dt ≤ 210A/µs, V

DD

≤ V

(BR)DSS

,

 t=60s, ƒ=60Hz

 Uses IRF540N data and test conditions

D

A



G

S

IRFI540N

A

A

)

A

A

1000

V G S
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOT TO M 4.5V

100

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE W IDTH
T = 2 5 °C

1

0.1 1 10 100

V , D ra in-to -S o urc e V oltage (V)

DS

C

Fig 1. Typical Output Characteristics

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

10

D

I , Drain-to-Sou rce Current (A)

4.5V

20µs PULSE WIDTH
T = 175°C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 2. Typical Output Characteristics

3.0

I = 2 7A

D

100

10

D

I , D rain-to-Source Current (A)

1

45678910

T = 25°C

J

T = 175°C

J

V = 50V

DS

20µs PULSE W IDTH

V , Ga te-to-Sou rc e Vo ltage (V

GS

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(N o rma liz ed )

1.0

0.5

DS(on)

R , D ra in -to -S o u rc e On R e s is ta nc e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Tem pe rature (°C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 10 V

GS