International Rectifier IRFI520N Datasheet

PD - 9.1362A

TO-220 FULLPAK

PRELIMINARY

IRFI520N

HEXFET® Power MOSFET

l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7.6
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.3 A
I

DM

PD @TC = 25°C Power Dissipation 30 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  38

Linear Derating Factor 0.20 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy  91 mJ
Avalanche Current 5.7 A
Repetitive Avalanche Current 3.0 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

D

V

= 100V

DSS

R

S

= 0.20Ω

DS(on)

ID = 7.6A

Thermal Resistance

R
R

θJC
θJA

Parameter Min. Typ. Max. Units

Junction-to-Case –––– –––– 5.0
Junction-to-Ambient –––– –––– 65

°C/W

3/16/98

IRFI520N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 4.3A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 2.7 ––– ––– S VDS = 25V, ID = 5.7A

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– ––– 25 ID = 5.7A
Gate-to-Source Charge ––– ––– 4.4 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 4.5 ––– VDD = 50V
Rise Time ––– 23 ––– ID = 5.7A
Turn-Off Delay Time ––– 32 ––– RG = 22Ω

ns
Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

–––

–––

4.5

7.5

–––

–––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 330 ––– VGS = 0V
Output Capacitance ––– 92 ––– VDS = 25V
Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 7.6

––– ––– 38

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.3A, VGS = 0V 
Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A
Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 4.7mH

= 5.7A. (See Figure 12)

AS

≤ 5.7A, di/dt ≤ 240A/µs, V

DD

≤ V

(BR)DSS

,

 t=60s, ƒ=60Hz

 Uses IRF520N data and test conditions

D

A



G

S

IRFI520N

A

A

)

A

A

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOT TOM 4. 5V

10

D

I , D ra in-to -S o u rc e C u rre n t (A )

4.5V

20µs PULS E WIDTH
T = 25°C

1

0.1 1 10 100

V , D rain-to-S ource V oltage (V)

DS

C

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

10

4.5V

D

I , D ra in-to -S o u rc e C u rre n t (A )

20µs PULS E WID TH
T = 175°C

1

0.1 1 10 100

V , D rain-to-S ource V oltage (V)

DS

C

Fig 2. Typical Output Characteristics

3.0

I = 9 . 5 A

D

T = 25°C

J

T = 175°C

10

D

I , D rain-to-Source Current (A)

1

45678910

V , Ga te-to - S o u rc e Vo ltage (V

GS

J

V = 50V

DS

20µs PULSE W IDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(N o rma lize d )

1.0

0.5

DS(on)

R , D ra in -to -S o u rc e On R e s is tan c e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Tem pe rature (°C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 10 V

GS