International Rectifier IRFI3205 Datasheet

PD - 9.1374B

TO-220 FULLPAK

IRFI3205

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

G

D

V

= 55V

DSS

R

S

DS(on)

I

D

= 0.008Ω

= 64A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64

@ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A

I

D

I

DM

PD @TC = 25°C Power Dissipation 63 W

V

GS

E

AS

I

AR

E

AR

dv/d t Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  390

Linear Derating Factor 0.42 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 480 mJ
Avalanche Current 59 A
Repetitive Avalanche Energy 6.3 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 2.4 °C/W
Junction-to-Ambient ––– 65 °C/W

°C

8/25/97

IRFI3205

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.008 Ω VGS = 10V, ID = 34A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 42 ––– –– – S VDS = 25V, ID = 59A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– – – – 170 ID = 59A
Gate-to-Source Charge –– – – –– 32 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 74 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 100 ––– ID = 59A
Turn-Off Delay Time ––– 43 ––– RG = 2.5Ω

ns
Fall Time ––– 70 ––– RD = 0.39Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 4000 ––– VGS = 0V
Output Capacitance ––– 1300 ––– VDS = 25V
Reverse Transfer Capacitance ––– 480 – –– ƒ = 1.0MHz, See Fig. 5 

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V 
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 59A
Reverse RecoveryCharge ––– 450 680 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 190µH

= 59A. (See Figure 12)

AS

≤ 59A, di/dt ≤ 290A/µs, V

DD

≤ V

(BR)DSS

,

 t=60s, ƒ=60Hz

 Uses IRF3205 data and test conditions

64

390

showing the

A

p-n junction diode.



D

G

S

IRFI3205

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

D

I , D rain-to-Source C urrent (A)

10

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

4.5V
20µs PULSE WIDTH

T

J

T = 2 5 ° C

C

Fig 1. Typical Output Characteristics

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

4.5V

D

I , D rain-to-Sou rce C urrent (A )

20µs PUL SE W IDTH

T

T = 175°C

J

A

10

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

C

A

Fig 2. Typical Output Characteristics

2.0

I = 98A

D

T = 25°C

J

T = 175°C

100

10

D

I , Dra in -to-Sou r ce Curr ent (A)

1

45678910

V , Ga te-to-S o urce Voltage (V)

GS

J

V = 25 V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(No rm alized)

0.5

DS(on)

R , D rain -to-S o urc e O n R e si stan ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tion Tempe ratur e (°C )

J

V = 1 0V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature