International Rectifier IRFI1310G Datasheet

HEXFET® Power MOSFET

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Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Repetitive Avalanche Rated

175°C Operating Temperature

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.

PD - 9.1222

IRFI1310G

V

= 100V

DSS

R
ID = 22A

DS(on)

= 0.04Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 22
ID @ TC = 100°C Continuous Collector Current, VGS @ 10V 15 A
I

DM

PD @TC = 25°C Power Dissipation 48 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T

J

T

STG

Pulsed Drain Current 88

Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 120 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 4.8 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case –––– –––– 3.1
Junction-to-Ambient –––– –––– 65

°C/W

Revision 0

IRFI1310G

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 13A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 25A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– ––– 110 ID = 25A
Gate-to-Source Charge ––– ––– 18 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 42 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 50V
Rise Time ––– 77 ––– ID = 25A
Turn-Off Delay Time ––– 82 ––– RG = 9.1Ω

ns

Fall Time ––– 64 ––– RD = 2.0Ω, See Fig. 10

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 2500 ––– VGS = 0V
Output Capacitance ––– 630 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V

= 25V, starting TJ = 25°C, L = 1.0mH

DD

RG = 25Ω, I

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

––– ––– 22

A

––– ––– 88

Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 13A, VGS = 0V
Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 25A
Reverse RecoveryCharge ––– 0.79 1.2 µC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

≤ 25A, di/dt ≤ 170A/µs, V

SD

DD

≤ V

(BR)DSS

,

t=60s, ƒ=60Hz

TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 13A. (See Figure 12)

AS

IRFI1310G

GS

, Gate-to-Source Voltage (V)

D

I , Drain-to-So urce Current (A)

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1000

VG S
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 1 0 10 0

V , D rain-to-Source Voltage (V)

DS

4.5V

20µs PULSE WIDTH
T = 25°C

C

Fig 1. Typical Output Characteristics,

TC = 25oC

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH
T = 175°C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 2. Typical Output Characteristics,

TC = 175oC

3.0

I = 25A

D

100

10

1

4 5 6 7 8 9 10

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

2.5

T = 25°C

J

T = 175°C

J

V = 50V

DS

20µ s PULS E WID TH

V

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-6 0 -4 0 -20 0 20 40 60 80 100 120 14 0 160 18 0

T , Junction Temperature (°C)

J

V = 10V

GS

Vs. Temperature