International Rectifier IRFI1010N Datasheet

PD - 9.1373A

TO-220 FULLPAK

IRFI1010N

HEXFET® Power MOSFET

l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS 
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
I

DM

PD @TC = 25°C Power Dissipation 58 W

V

GS

E

AS

I

AR

E

AR

dv/d t Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  290

Linear Derating Factor 0.38 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 360 mJ
Avalanche Current 43 A
Repetitive Avalanche Energy 5.8 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 2.6
Junction-to-Ambient ––– 65

D

R

DS(on)

V

DSS

= 55V

= 0.012Ω

ID = 49A

S

°C/W

°C

8/25/97

IRFI1010N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 55 –– – ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.012 Ω VGS = 10V, ID = 26A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 30 ––– ––– S VDS = 25V, ID = 43A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– – –– -100

VDS = 55V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 130 ID = 43A
Gate-to-Source Charge ––– – –– 23 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 53 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 11 ––– VDD = 28V
Rise Time ––– 66 ––– ID = 43A
Turn-Off Delay Time ––– 40 ––– RG = 3.6Ω

ns
Fall Time ––– 46 ––– RD = 0.62Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 2900 ––– VGS = 0V
Output Capacitance ––– 880 ––– VDS = 25V
Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5

pF

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 26A, VGS = 0V 
Reverse Recovery Time – – – 81 1 2 0 ns TJ = 25°C, IF = 43A
Reverse RecoveryCharge ––– 240 370 nC di/dt = 100A/µs

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 390µH

= 43A. (See Figure 12)

AS

≤ 43A, di/dt ≤ 260A/µs, V

DD

≤ V

(BR)DSS

,

 t=60s, ƒ=60Hz

 Uses IRF1010N data and test conditions

49

290

showing the

A

p-n junction diode.



D

G

S

IRFI1010N

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

D

I , D rain-to-Sou rce C urrent (A )

4.5V

10

0.1 1 10 100

V , D rain-to-Source Voltage (V)

DS

1000

20µs PULSE WIDTH
T = 25° C

C

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTT OM 4.5V

100

D

I , D rain-to-Sou rce C urrent (A )

4.5V

20µs P ULSE WIDTH
T = 175°C

A

10

0.1 1 10 100

V , Drain-to-So urc e V oltag e (V)

DS

C

A

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

I = 72A

D

T = 25°C

J

100

10

D

I , Dr a in -to- So u rce C urr en t (A)

1

45678910

V , Ga te-to-S o urce Voltage (V )

GS

T = 175°C

J

V = 25 V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(Norm a lized)

1.0

0.5

DS(on)

R , Drain -to-So urc e O n Re sis tan ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Ju nc tio n T em peratu r e (°C )

J

V = 10V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature