International Rectifier IRFHS8342PbF Datasheet
Absolute Maximum Ratings
DS
GS
D
D
D
D
D
DM
Pulsed Drain Current
c
Power Dissipation
f
Power Dissipation
f
J
STG
G
3
S
D2
D1
4S
5D
6D
TOP VIEW
D
IRFHS8342PbF
Standard Pack
DSon
≤
≤
HEXFET® Power MOSFET
V
DS
V
GS max
R
DS(on) max
(@VGS = 10V)
Q
g(typical)
(@VGS = 4.5V)
I
D
(@T
c(Bottom)
= 25°C)
30 V
20 V
±
16.0
4.2 nC
8.5
d
m
A
Ω
2mm x 2mm PQFN
Applications
• Control MOSFET for Buck Converters
• System/Load Switch
Features and Benefits
Features Resulting Benefits
Low R
Low Thermal Resistance to PCB (
Low Profile (
Compati ble with Existing Surf ac e Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification Increased Reliability
(≤ 16.0mΩ) Lower Conduction Losses
13°C/W) Enable better thermal dis sipation
1.0 mm) results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
D
D
D
D
D
S
G
S
Orderable part number Package Type
IRFHS8342TRPbF PQFN 2mm x 2mm Tape and Reel 4000
IRFHS8342TR2PbF
V
V
I
@ TA = 25°C
I
@ TA = 70°C
I
@ T
I
@ T
I
@ T
I
PD @TA = 25°C
PD @TA = 70°C
T
T
Notes through are on page 2
C(Bottom)
C(Bottom)
C(Bottom)
= 25°C
= 70°C
= 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Form Quantity
PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259
Parameter Units
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V (Package Limited)
GS
f
Max.
30
±20
d
8.8
7.1
d
19
d
15
d
8.5
76
2.1
1.3
0.02
-55 to + 150
Note
V
A
W
W/°C
°C
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Thermal Resistance
R
θ
JC
(Bottom)
Junction-to-Case
g
–––13R
θ
JC
(Top)
Junction-to-Case
g
–––
90
R
θ
JA
Junction-to-Ambient
f
–––60R
θ
JA
Junction-to-Ambient (<10s)
f
–––
42
Static @ TJ = 25°C (unless otherwise specified)
DSS
DSS
J
DS( on)
GS(th)
GS(th)
DSS
GSS
g
g
gs
gd
oss
G
–––
d(on)
r
d(off)
f
iss
oss
rss
S
SM
(Body Diode)
c
SD
rr
rr
on
GS
GS
GS
Conditions
D
GS
Conditions
J
showing the
p-n junction diode.
DS
D
D
DS
DS
GS
DD
Parameter Min. Typ. Max. Units
BV
ΔΒ
R
V
ΔV
I
I
V
/ΔT
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
Static Drain-to-Sour ce On-Resistanc e ––– 13 16
––– 20 25
m
Gate Threshold Voltage 1.35 1.8 2.35 V
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Sourc e Forward Leakage ––– ––– 100
Gate-to-Sourc e Reverse Leak age ––– ––– -100
μA
nA
gfs Forward Transconductanc e 18 ––– ––– S
Q
Q
Q
Q
Q
R
t
t
t
t
C
C
C
Total Gate Charge ––– 4.2 ––– nC
Total Gate Charge ––– 8.7 ––– VDS = 15V
Gate-to-Sourc e Charge ––– 1.5 –––
nC
Gate-to-Drain Charge ––– 1.3 –––
Output Charge ––– 3.0 ––– nC
Gate Resistance ––– 1.9
Turn-On Delay Time ––– 5.9 –––
Rise Time –––15–––
Turn-Off Delay Time ––– 5.2 –––
ns
Fall Time ––– 5.0 –––
Input Capac itance ––– 600 –––
Output Capacitance ––– 100 –––
pF
Reverse Transfer Capacitanc e ––– 46 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
I
V
t
Q
t
Continuous Source Current
(Body Diode)
Pulsed Source Current
––– ––– 8.5
––– ––– 76
d
Diode Forward Voltage ––– ––– 1.0 V
Reverse Recovery Time ––– 11 17 ns
Reverse Recovery Charge ––– 13 20 nC
Forward Turn-On Time Time is dominated by parasitic Inductance
IRFHS8342PbF
VGS = 0V, ID = 250μA
Reference to 25°C, I
V
= 10V, ID = 8.5A
Ω
= 4.5V, ID = 6.8A
V
V
= VGS, ID = 25μA
DS
= 24V, VGS = 0V
V
VDS = 24V, VGS = 0V, TJ = 125°C
= 20V
V
V
= -20V
= 10V, ID = 8.5A
V
VGS = 4.5V, VDS = 15V, ID = 8.5A
= 10V
V
I
= 8.5Ad (See Fig. 6 & 16)
VDS = 16V, VGS = 0V
Ω
V
= 15V, VGS = 4.5V
I
= 8.5A
d
RG=1.8Ω
See Fig.17
VGS = 0V
V
= 25V
ƒ = 1.0MHz
MOSFET symbol
A
integral reverse
TJ = 25°C, IS = 8.5Ad, VGS = 0V
T
= 25°C, IF = 8.5Ad, VDD = 15V
di/dt = 330A/μs
e
= 1mA
ed
e
d
d
e
D
G
S
e
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
R
is measured at T
θ
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
of approximately 90°C.
J
Parameter Typ. Max. Units
°C/W
IRFHS8342PbF
100
)
A
(
t
n
e
r
r
10
u
C
e
c
r
u
o
S
o
t
n
i
1
a
r
D
,
D
I
2.5V
≤
TOP 10V
BOTTOM 2.5V
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
TJ = 150°C
10
TJ = 25°C
V
= 15V
DS
60μs PULSE WIDTH
≤
1.0
2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
VGS
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
100
)
A
(
t
n
e
r
r
u
C
e
c
r
u
10
o
S
o
t
n
i
a
r
D
,
D
I
2.5V
60μs PULSE WIDTH
≤
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 8.5A
V
= 10V
1.6
1.4
)
d
e
z
i
l
1.2
a
m
r
o
N
(
1.0
0.8
GS
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
TOP 10V
BOTTOM 2.5V
VGS
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
Fig 3. Typical Transfer Characteristics
10000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
1000
100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
oss
ds
C
iss
C
oss
C
rss
+ Cgd, C
+ C
gd
SHORTED
ds
Fig 4. Normalized On-Resistance vs. Temperature
14
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
e
t
a
G
,
V
ID= 8.5A
12
10
8
6
4
S
G
2
VDS= 24V
VDS= 15V
VDS= 6.0V
0
10
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
024681012
Q
Total Gate Charge (nC)
G
3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Loading...