International Rectifier IRFD420 Datasheet

HEXFET® Power MOSFET
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Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on­resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
PD -9.1227
IRFD420
V
= 500V
DSS
R ID = 0.37A
DS(on)
= 3.0
HD-1
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10 V 0.37 ID @ TC = 100°C Continuous Drain Current, VGS @ 10 V 0.23 A I
PD @TC = 25°C Power Dissipation 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns T
J
T
STG
Pulsed Drain Current 3.0
Linear Derating Factor 0.0083 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 51 mJ Avalanche Current 0.37 A Repetitive Avalanche Energy 0.10 mJ
Operating Junction and -55 to + 150 Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJA
Junction-to-Ambient 120 °C/W
A
Revision 0
IRFD420
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 500 V VGS = 0V, ID = 250µA
/T
Breakdown Voltage Temp. Coefficient 0.59 V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance 3.0 VGS = 10.0V, ID = 0.22A Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 1.5 S VDS = 50V, ID = 1.3A Drain-to-Source Leakage Current 25 VDS = 500V, VGS = 0V
250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 VGS = -20V
µA
nA
Total Gate Charge 24 ID = 2.1A Gate-to-Source Charge 3.3 nC VDS = 400V Gate-to-Drain ("Miller") Charge 13 VGS = 10V Turn-On Delay Time 8.0 VDD = 250V Rise Time 8.6 ID = 2.1A Turn-Off Delay Time 33 RG = 18
ns
Fall Time 16 RD = 120 Internal Drain Inductance 4.0 Between lead,
6mm (0.25in.)
Internal Source Inductance 6.0 from package
nH
and center of
die contact Input Capacitance 360 VGS = 0V Output Capacitance 92 pF VDS = 25V Reverse Transfer Capacitance 37 ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
V
= 50V, starting TJ = 25°C, L = 40mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode) p-n junction diode.
0.37
A
5.0
Diode Forward Voltage 1.6 V TJ = 25°C, IS = 0.37A, VGS = 0V Reverse Recovery Time 260 520 ns TJ = 25°C, IF = 2.1A Reverse RecoveryCharge 0.70 1.4 µC di/dt = 100A/µs Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
4.4A, di/dt 90A/µs, V
SD
DD
V
(BR)DSS
,
TJ ≤ 150°C
Pulse width 300µs; duty cycle 2%.
= 1.5A.
AS
IRFD420
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (Amps) I
D
, Drain Current (Amps) I
D
, Drain Current (Amps)
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Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics,
TC = 150oC
Vs. Temperature
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