International Rectifier IRFD214 Datasheet
HEXFET® Power MOSFET
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Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
PD -9.1271
IRFD214
V
= 250V
DSS
R
ID = 0.45A
DS(on)
= 2.0Ω
HD-1
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10 V 0.45
ID @ TC = 100°C Continuous Drain Current, VGS @ 10 V 0.29 A
I
DM
PD @TC = 25°C Power Dissipation 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.8 V/ns
T
J
T
STG
Pulsed Drain Current 3.6
Linear Derating Factor 0.0083 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 57 mJ
Avalanche Current 0.45 A
Repetitive Avalanche Energy 0.10 mJ
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJA
Junction-to-Ambient — — 120 °C/W
A
Revision 0
IRFD214
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient — 0.39 — V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance — — 2.0 VGS = 10.0V, ID = 0.27A
Ω
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 0.90 — — S VDS = 50V, ID = 1.6A
Drain-to-Source Leakage Current — — 25 VDS = 250V, VGS = 0V
— — 250 VDS = 200V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — 100 VGS = 20V
Gate-to-Source Reverse Leakage — — -100 VGS = -20V
µA
nA
Total Gate Charge — — 8.2 ID = 2.7A
Gate-to-Source Charge — — 1.8 VDS = 200V
nC
Gate-to-Drain ("Miller") Charge — — 4.5 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time — 7.0 — VDD = 125V
Rise Time — 7.6 — ID = 2.7A
ns
Turn-Off Delay Time — 16 — RG = 24Ω
Fall Time — 7.0 — RD = 45Ω, See Fig. 10
Internal Drain Inductance — 4.0 — Between lead,
Internal Source Inductance — 6.0 — 6mm (0.25in.)
nH
from package
and center of
die contact
Input Capacitance — 140 — VGS = 0V
Output Capacitance — 42 — pF VDS = 25V
Reverse Transfer Capacitance — 9.6 — ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 50V, starting TJ = 25°C, L = 28mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
— — 0.45
A
— — 3.6
Diode Forward Voltage — — 2.0 V TJ = 25°C, IS = 0.45A, VGS = 0V
Reverse Recovery Time — 190 390 ns TJ = 25°C, IF = 2.7A
Reverse RecoveryCharge — 0.64 1.3 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 2.7A, di/dt ≤ 65A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 1.8A. (See Figure 12)
AS
IRFD214
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (Amps)
I
D
, Drain Current (Amps)
I
D
, Drain Current (Amps)
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Fig 1. Typical Output Characteristics,
T
= 25oC
C
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics,
TC = 150oC
Vs. Temperature
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