International Rectifier IRFBC40AS Datasheet
PD- 91897A
SMPS MOSFET
IRFBC40AS
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 6.2
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.9 A
I
DM
PD @TC = 25°C Power Dissipation 125 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
T
J
T
STG
Pulsed Drain Current 25
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
V
DSS
Rds(on) max I
600V 1.2Ω 6.2A
2
D Pak
°C
D
Typical SMPS Topology:
l Single transistor Forward
Notes through are on page 9
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6/29/99
IRFBC40AS
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 48 ––– VGS = 0V, VDS = 0V to 480V
oss
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 1.2 Ω VGS = 10V, ID = 3.7A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 3.4 ––– ––– S VDS = 50V, ID = 3.7A
Total Gate Charge ––– ––– 4 2 ID = 6.2A
Gate-to-Source Charge ––– ––– 10 nC VDS = 480V
Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 –– – VDD = 300V
Rise Time ––– 23 ––– ID = 6.2A
Turn-Off Delay Time ––– 31 –– – RG = 9.1Ω
ns
Fall Time ––– 18 –– – RD = 47Ω,See Fig. 10
Input Capacitance ––– 1036 ––– VGS = 0V
Output Capacitance ––– 136 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7.0 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1487 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 36 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 570 m J
Avalanche Current ––– 6.2 A
Repetitive Avalanche Energy ––– 13 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.0 °C/W
Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
6.2
25
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 6.2A, VGS = 0V
Reverse Recovery Time ––– 431 647 ns TJ = 25°C, IF = 6.2A
Reverse RecoveryCharge ––– 1.8 2.8 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
IRFBC40AS
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
J
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics,
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
J
0.1
1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics,
3.0
I =
D
5.9A
2.5
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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