International Rectifier IRFBC40A Datasheet
PD -91885A
SMPS MOSFET
IRFBC40A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified ( See AN 1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 6.2
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.9 A
I
DM
PD @TC = 25°C Power Dissipation 125 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
T
J
T
STG
Pulsed Drain Current 25
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
600V 1.2Ω 6.2A
TO-220AB
SDG
°C
D
Typical SMPS Topologies:
l Single Transistor Forward
Notes through are on page 8
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6/24/99
IRFBC40A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 48 ––– VGS = 0V, VDS = 0V to 480V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 1.2 Ω VGS = 10V, ID = 3.7A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 3.4 ––– ––– S VDS = 50V, ID = 3.7A
Total Gate Charge ––– ––– 42 ID = 6.2A
Gate-to-Source Charge ––– ––– 10 nC VDS = 480V
Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 300V
Rise Time ––– 23 ––– ID = 6.2A
Turn-Off Delay Time ––– 31 ––– RG = 9.1Ω
ns
Fall Time ––– 18 ––– RD = 47Ω,See Fig. 10
Input Capacitance ––– 1036 ––– VGS = 0V
Output Capacitance ––– 136 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7. 0 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1487 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 36 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 570 mJ
Avalanche Current ––– 6.2 A
Repetitive Avalanche Energy ––– 13 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient 62
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 6.2A, VGS = 0V
Reverse Recovery Time ––– 431 647 ns TJ = 25°C, IF = 6.2A
Reverse RecoveryCharge ––– 1.8 2.8 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
6.2
25
showing the
A
p-n junction diode.
G
D
S
IRFBC40A
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
J
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics,
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
J
0.1
1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics,
3.0
I =
D
5.9A
6.2A
2.5
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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