International Rectifier IRFBC30S Datasheet
PD - 9.1015
PRELIMINARY
HEXFET® Power MOSFET
l Surface Mount (IRFBC30S)
l Low-profile through-hole (IRFBC30L)
l Available in Tape & Reel (IRFBC30S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
2
The D
Pak is a surface mount power package capable of the accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBC30L) is available for low-profile applications.
G
2
Pak is suitable for high
IRFBC30S/L
D
S
V
R
2
D Pa k
DSS
DS(on)
= 3.6A
I
D
= 600V
= 2.2Ω
TO-262
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.6
@ TC = 100°C Continuous Drain Current, VGS @ 10V 2.3 A
I
D
I
DM
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 74 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt 3.0 V/ns
T
J
T
STG
Pulsed Drain Current 14
Linear Derating Factor 0.59 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 290 mJ
Avalanche Current 3.6 A
Repetitive Avalanche Energy 7.4 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.7
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
°C/W
°C
7/22/97
IRFBC30S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.62 ––– V/°C Reference to 25°C, ID =1mA
J
Static Drain-to-Source On-Resistance ––– ––– 2. 2 Ω VGS =10V, ID =2.2A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 2.5 ––– ––– S VDS = 50V, ID = 2.2A
Drain-to-Source Leakage Current
––– ––– 100
––– ––– 500 VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– – –– -100
VDS = 600V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 31 ID = 3.6A
Gate-to-Source Charge ––– ––– 4.6 nC VDS = 360V
Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 300V
Rise Time ––– 13 ––– ID = 3.6A
Turn-Off Delay Time ––– 3 5 ––– RG = 12Ω
ns
Fall Time ––– 14 ––– RD =82Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 660 ––– VGS = 0V
Output Capacitance ––– 86 –– – pF VDS = 25V
Reverse Transfer Capacitance ––– 19 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
3.6
14
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS =3.6A, VGS = 0V
Reverse Recovery Time ––– 370 810 ns TJ = 25°C, IF =3.6A
Reverse Recovery Charge ––– 2 .0 4 .2 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 3000µs; duty cycle ≤ 2%.
Uses IRFBC30 data and test conditions
=50V, starting TJ = 25°C, L =41mH
= 3.6A. (See Figure 12)
AS
≤ 3.6A, di/dt ≤ 60A/µs, V
DD
≤ V
(BR)DSS
,
D
G
S
IRFBC30S/L
Loading...