International Rectifier IRFBA22N50A Datasheet

SMPS MOSFET

PD-91866B

IRFBA22N50A

HEXFET® Power MOSFET

Applications

l Switch Mode Power Supply ( SMPS )
l Uninterruptible Power Supply
l High Speed Power Switching

V

DSS

R

DS(on)

max I

500V 0.23Ω 24A

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss Specified (See AN1001)

Super-220™

(TO-273AA)

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 24
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
I

DM

PD @TC = 25°C Power Dissipation 340 W

V

GS

dv/dt Peak Diode Recovery dv/dt  3.4 V/ns

T

J

T

STG

Pulsed Drain Current  96

Linear Derating Factor 2.7 W/°C
Gate-to-Source Voltage ± 30 V

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N

°C

D

Applicable Off Line SMPS Topologies:

l Full Bridge Converters
l Power Factor Correction Boost

Notes  through  are on page 8

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IRFBA22N50A

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 154 ––– VGS = 0V, VDS = 0V to 400V 

oss

Avalanche Characteristics

E

AS

I

AR

E

AR

Thermal Resistance

R

θJC

R

θCS

R

θJA

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

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Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance ––– ––– 0.23 Ω VGS = 10V, ID = 13.8A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V

Gate-to-Source Reverse Leakage ––– ––– -100

––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C

µA

nA

= 500V, VGS = 0V

V

DS

VGS = -30V

Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 12 ––– ––– SVDS = 50V, ID = 13.8A
Total Gate Charge ––– ––– 114 ID = 23A
Gate-to-Source Charge ––– ––– 28 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 20 ––– VDD = 250V
Rise Time ––– 66 ––– ID = 23A
Turn-Off Delay Time ––– 46 ––– RG = 4.3Ω

ns

Fall Time ––– 44 ––– RD = 10.6Ω,See Fig. 10 
Input Capacitance ––– 3397 ––– VGS = 0V
Output Capacitance ––– 505 ––– VDS = 25V
Reverse Transfer Capacitance ––– 17 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 4884 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 134 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz

Parameter Typ. Max. Units

Single Pulse Avalanche Energy ––– 1180 mJ
Avalanche Current ––– 24 A
Repetitive Avalanche Energy ––– 34 mJ

Parameter Typ. Max. Units

Junction-to-Case ––– 0.37
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 58

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 23A, VGS = 0V 
Reverse Recovery Time ––– 490 735 ns TJ = 25°C, IF = 23A
Reverse RecoveryCharge ––– 6.4 9.6 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

23

92

showing the

A

p-n junction diode.

G



D

S

IRFBA22N50A

100

10

1

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 150 C

V , Drain-to-Source Voltage (V)

DS

4.5V

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

23A

I =



D

2.5

°

T = 150 C



J

2.0

10

°

T = 25 C



J

D

I , Drain-to-Source Current (A)

V = 50V

DS



1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =



10V

GS

°

Vs. Temperature

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