International Rectifier IRFBA1405P Datasheet
AUTOMOTIVE MOSFET
PD -94111
Typical Applications
● Electric Power Steering (EPS)
● Anti-lock Braking System (ABS)
● Wiper Control
● Climate Control
● Power Door
IRFBA1405P
HEXFET® Power MOSFET
D
V
= 55V
DSS
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
S
Super-220™
R
DS(on)
= 5.0mΩ
ID = 174A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 174
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 123 A
I
DM
PD @TC = 25°C Power Dissipation 330 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 680
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 560 m J
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -40 to + 175
Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Recommended clip force 20 N
°C
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3/1/01
IRFBA1405P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1500 –– – VGS = 0V, VDS = 0V to 44V
oss
Drain-to-Source Breakdown Voltage 55 –– – –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 4.3 5.0 mΩ VGS = 10V, ID = 101A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 110A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 170 260 ID = 101A
Gate-to-Source Charge ––– 44 66 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 62 93 VGS = 10V
Turn-On Delay Time ––– 13 ––– VDD = 38V
Rise Time ––– 190 ––– ID = 110A
Turn-Off Delay Time ––– 130 ––– RG = 1.1Ω
ns
Fall Time ––– 110 ––– VGS = 10V
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5480 ––– VGS = 0V
Output Capacitance ––– 1210 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 5210 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 900 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
174
680
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 101A, VGS = 0V
Reverse Recovery Time ––– 88 130 ns TJ = 25°C, IF = 101A
Reverse RecoveryCharge – –– 250 380 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.45 °C/W
Case-to-Sink, Flat, Greased Surface 0.50 –––
Junction-to-Ambient ––– 58
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D
S
IRFBA1405P
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
T = 175 C
J
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
°
2.5
169A
I =
D
100
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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