International Rectifier IRFB9N60A Datasheet
PD - 91811
IRFB9N60A
HEXFET® Power MOSFET
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleling
l Simple Drive Requirements
G
D
V
= 600V
DSS
R
DS(on)
= 0.75Ω
ID = 9.2A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.2
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.8 A
I
DM
PD @TC = 25°C Power Dissipation 170 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 37
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 30 V
Single Pulse Avalanche Energy 290 mJ
Avalanche Current 9.2 A
Repetitive Avalanche Energy 17 m J
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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10/7/98
IRFB9N60A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 96 ––– VGS = 0V, VDS = 0V to 480V
oss
Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.75 Ω VGS = 10V, ID = 5.5A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 5.5 ––– ––– S VDS = 25V, ID = 5.5A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 480V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
VGS = -30V
Total Gate Charge ––– – –– 49 ID = 9.2A
Gate-to-Source Charge ––– ––– 13 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– –– – 20 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 300V
Rise Time ––– 25 ––– ID = 9.2A
Turn-Off Delay Time ––– 30 ––– RG = 9.1Ω
ns
Fall Time ––– 22 ––– RD = 35.5Ω,See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
4.5
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1400 ––– VGS = 0V
Output Capacitance ––– 180 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7.1 –– – pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1957 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 49 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
9.2
37
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V
Reverse Recovery Time ––– 530 80 0 n s TJ = 25°C, IF = 9.2A
Reverse RecoveryCharge ––– 3.0 4.4 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
C
eff. is a fixed capacitance that gives the same charging time
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 6.8mH
J
AS
≤ 9.2A, di/dt ≤ 50A/µs, V
= 9.2A. (See Figure 12)
≤ V
DD
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
TJ ≤ 150°C
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D
S
IRFB9N60A
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
4.7V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
J
100
10
D
I , Drain-to-Source Current (A)
1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.7V
4.7V
20µs PULSE WIDTH
T = 150 C
1 10 100
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
9.2A
2.5
°
T = 150 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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