International Rectifier IRFB42N20D Datasheet
PD- 94208
SMPS MOSFET
IRFB42N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 31 A
I
DM
PD @TA = 25°C Power Dissipation 2.4 W
PD @TC = 25°C Power Dissipation 330
V
GS
dv/dt Peak Diode Recovery dv/dt 2.5 V/ns
T
J
T
STG
Pulsed Drain Current 180
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
R
DS(on)
max I
200V 0.055Ω 44A
TO-220AB
D
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Notes through are on page 8
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFB42N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 400 ––– VGS = 0V, VDS = 0V to 160V
oss
Drain-to-Source Breakdown Voltage 200 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.055 Ω VGS = 10V, ID = 26A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 26A
Total Gate Charge ––– 91 140 ID = 26A
Gate-to-Source Charge ––– 24 36 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 43 65 VGS = 10V,
Turn-On Delay Time ––– 18 ––– VDD = 100V
Rise Time ––– 69 ––– ID = 26A
Turn-Off Delay Time ––– 29 ––– RG = 1.8Ω
ns
Fall Time ––– 32 ––– VGS = 10V
Input Capacitance ––– 3430 ––– VGS = 0V
Output Capacitance ––– 530 ––– VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 5310 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 210 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 510 mJ
Avalanche Current ––– 26 A
Repetitive Avalanche Energy ––– 33 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
44
180
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1. 3 V TJ = 25°C, IS = 26A, VGS = 0V
Reverse Recovery Time ––– 220 330 ns TJ = 25°C, IF = 26A
Reverse RecoveryCharge ––– 1860 2790 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
IRFB42N20D
1000
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
1000
100
10
D
I , Drain-to-Source Current (A)
°
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
44A
I =
D
3.0
100
10
1
D
I , Drain-to-Source Current (A)
0.1
5 6 7 8 9 10 11
Fig 3. Typical Transfer Characteristics
°
T = 175 C
J
°
T = 25 C
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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