International Rectifier IRFB260N Datasheet
SMPS MOSFET
PD - 94270
IRFB260N
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max I
200V 0.040Ω 56A
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective C
OSS
to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
I
DM
PD @TC = 25°C Power Dissipation 380 W
V
GS
dv/dt Peak Diode Recovery dv/dt 10 V/ns
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 2.5 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
D
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Notes through are on page 8
Junction-to-Case ––– 0.40
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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8/29/01
IRFB260N
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 500 ––– VGS = 0V, VDS = 0V to 160V
oss
Drain-to-Source Breakdown Voltage 200 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 34A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 200V, VGS = 0V
DS
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 29 ––– ––– SVDS = 50V, ID = 34A
Total Gate Charge ––– 150 220 ID = 34A
Gate-to-Source Charge ––– 24 37 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 67 100 VGS = 10V
Turn-On Delay Time ––– 17 ––– VDD = 100V
Rise Time ––– 64 ––– ID = 34A
Turn-Off Delay Time ––– 52 ––– RG = 1.8Ω
ns
Fall Time ––– 50 ––– VGS = 10V
Input Capacitance ––– 4220 ––– VGS = 0V
Output Capacitance ––– 580 ––– VDS = 25V
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 5080 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 230 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 450 mJ
Avalanche Current ––– 34 A
Repetitive Avalanche Energy ––– 38 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
56
220
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V
Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 34A
Reverse RecoveryCharge ––– 2.1 3 . 2 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
IRFB260N
(
)
1000
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
)
(Α
100.00
TJ = 175°C
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
56A
I =
D
3.0
2.5
2.0
1.5
10.00
, Drain-to-Source Current
D
I
1.00
3.0 5.0 7.0 9.0 11.0 13.0 15.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 25°C
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
Vs. Temperature
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