PD - 93926B
IRFB18N50K
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
V
DSS
500V 0.26Ω 17A
Circuits
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low R
DS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
PD @TC = 25°C Power Dissipation 220 W
V
GS
dv/dt Peak Diode Recovery dv/dt 11 V/ns
T
J
T
STG
Pulsed Drain Current 68
Linear Derating Factor 1.8 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 N
R
DS(on)
typ. I
TO-220AB
D
°C
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 370 mJ
Avalanche Current ––– 17 A
Repetitive Avalanche Energy ––– 22 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.56
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 58
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3/29/01
IRFB18N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 155 ––– VGS = 0V, VDS = 0V to 400V
oss
Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.59 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.26 0.29 Ω VGS = 10V, ID = 10A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 50 µA V
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C
nA
= 500V, VGS = 0V
DS
= 30V
GS
VGS = -30V
Forward Transconductance 6.4 ––– ––– SVDS = 50V, ID = 10A
Total Gate Charge ––– ––– 120 ID = 17A
Gate-to-Source Charge ––– ––– 34 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 22 ––– VDD = 250V
Rise Time ––– 60 ––– ID = 17A
Turn-Off Delay Time ––– 45 ––– RG = 7.5Ω
ns
Fall Time ––– 30 ––– VGS = 10V,See Fig. 10
Input Capacitance ––– 2830 ––– VGS = 0V
Output Capacitance ––– 330 ––– VDS = 25V
Reverse Transfer Capacitance ––– 38 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 3310 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 93 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
17
68
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 17A, VGS = 0V
Reverse Recovery Time ––– 520 780 ns TJ = 25°C, IF = 17A
Reverse RecoveryCharge ––– 5.3 8. 0 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting T
I
AS
I
SD
= 25°C, L = 2.5mH, RG = 25Ω,
J
= 17A,
≤ 17A, di/dt ≤ 149A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
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D
S
IRFB18N50K
100
10
1
0.1
, Drain-to-Source Current (A)
0.01
D
I
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100.00
TJ = 150°C
)
(Α
10.00
100
TOP 15V
12V
10V
8.0V
10
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
, Drain-to-Source Current (A)
D
I
VGS
5.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
2.0
I =
D
17A
1.00
1.5
TJ = 25°C
(Normalized)
1.0
0.10
, Drain-to-Source Current
D
I
V
= 100V
DS
0.01
5.0 6.0 7.0 8.0 9.0 10.0
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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