International Rectifier IRFB17N50L Datasheet
PD - 94084A
IRFB17N50L
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
l PWM Inverters
V
DSS
500V 0.28Ω 16A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 16
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
PD @TC = 25°C Power Dissipation 220 W
V
GS
dv/dt Peak Diode Recovery dv/dt 13 V/ns
T
J
T
STG
Pulsed Drain Current 64
Linear Derating Factor 1.8 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw lbft.in(N.m)10
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
t
rr
Q
I
RRM
t
on
SD
rr
Continuous Source Current 16 MOSFET symbol
(Body Diode)
Pulsed Source Current 64 integral reverse
(Body Diode)
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current ––– 7.3 11 A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
––– –––
––– 170 250 TJ = 25°C I
––– 220 330 TJ = 125°C di/dt = 100A/µs
––– 470 710 TJ = 25°C
––– 810 1210 TJ = 125°C
Typical SMPS Topologies
l Bridge Converters l All Zero Voltage Switching
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HEXFET® Power MOSFET
R
showing the
A
p-n junction diode.
ns
nC
DS(on)
typ. I
TO-220AB
G
= 16A
F
°C
D
D
S
3/28/01
IRFB17N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 159 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.6 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.28 0.32 Ω VGS = 10V, ID = 9.9A
Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
––– ––– 50 µA V
––– ––– 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C
nA
= 500V, VGS = 0V
DS
= 30V
GS
VGS = -30V
Forward Transconductance 11 ––– ––– SVDS = 50V, ID = 9.9A
Total Gate Charge ––– ––– 130 ID = 16A
Gate-to-Source Charge ––– ––– 33 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 59 VGS = 10V
Turn-On Delay Time ––– 21 ––– VDD = 250V
Rise Time ––– 51 ––– ID = 16A
Turn-Off Delay Time ––– 50 ––– RG = 7.5Ω
ns
Fall Time ––– 28 ––– VGS = 10V
Input Capacitance ––– 2760 ––– VGS = 0V
Output Capacitance ––– 325 ––– VDS = 25V
Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 3690 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 84 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Single Pulse Avalanche Energy ––– 390 mJ
Avalanche Current ––– 16 A
Repetitive Avalanche Energy ––– 22 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
I
= 16A.
AS
I
≤ 16A, di/dt ≤ 347A/µs, V
SD
TJ ≤ 150°C
Junction-to-Case ––– 0.56
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 3.0mH, RG = 25Ω,
J
DD
≤ V
(BR)DSS
,
2 www.irf.com
IRFB17N50L
100
10
1
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0V
0.1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100
°
T = 150 C
J
100
10
1
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
I =
D
16A
5.0V
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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