International Rectifier IRFB13N50A Datasheet
PD - 94339
SMPS MOSFET
IRFB13N50A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.1 A
I
DM
PD @TC = 25°C Power Dissipation 250 W
V
GS
dv/dt Peak Diode Recovery dv/dt 9.2 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 2.0 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
R
DS(on)
max I
500V 0.450 Ω 14A
TO-220AB
D
°C
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 560 mJ
Avalanche Current ––– 14 A
Repetitive Avalanche Energy ––– 25 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.50
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFB13N50A
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 160 ––– VGS = 0V, VDS = 0V to 400V
oss
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
i
RRM
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
I
AS
I
SD
TJ ≤ 150°C.
Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.450 Ω VGS = 10V, ID = 8.4A
Gate Threshold Voltage 2. 0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 500V, VGS = 0V
DS
= 30V
GS
VGS = -30V
Forward Transconductance 8.1 ––– ––– SVDS = 50V, ID = 8.4A
Total Gate Charge ––– ––– 81 ID = 14A
Gate-to-Source Charge ––– ––– 20 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 15 ––– VDD = 250V
Rise Time ––– 39 ––– ID = 14A
Turn-Off Delay Time ––– 39 ––– RG = 7.5Ω
ns
Fall Time ––– 31 ––– VGS = 10V,See Fig. 10
Input Capacitance ––– 1910 ––– VGS = 0V
Output Capacitance ––– 290 ––– VDS = 25V
Reverse Transfer Capacitance ––– 11 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2730 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 82 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
14
56
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 370 550 ns TJ = 125°C, IF = 14A
Reverse RecoveryCharge ––– 4.4 6.5 µC di/dt = 100A/µs
Reverse RecoveryCurrent ––– 21 31 A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
= 25°C, L = 5.7mH, RG = 25Ω,
J
= 14A, dv/dt = 7.6V/ns. (See Figure 12a)
≤ 14A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
,
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS.
D
G
S
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IRFB13N50A
)
)
)
(
)
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
V , Drain-to-Source Voltage (V
DS
4.5V
20µs PULSE WIDTH
T = 25 C
J
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
V , Drain-to-Source Voltage (V
DS
4.5V
20µs PULSE WIDTH
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
14A
2.5
T = 150 C
J
°
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature
J
V =
10V
GS
°
C
Fig 4. Normalized On-Resistance
10
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
Fig 3. Typical Transfer Characteristics
J
V = 50V
DS
20µs PULSE WIDTH
4 6 8 10 12 14 16
V , Gate-to-Source Voltage (V
GS
vs. Temperature
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