International Rectifier IRFB11N50A Datasheet
PD- 91809B
SMPS MOSFET
IRFB11N50A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A
I
DM
PD @TC = 25°C Power Dissipation 170 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.9 V/ns
T
J
T
STG
Pulsed Drain Current 44
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
500V 0.52Ω 11A
D
TO-220AB
GS
°C
D
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
l Power Factor Correction Boost
Notes through are on page 8
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3/30/99
IRFB11N5OA
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 97 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 500 ––– – –– V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance ––– ––– 0.52 Ω VGS = 10V, ID = 6.6A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 6.1 ––– ––– S VDS = 50V, ID = 6.6A
Total Gate Charge ––– ––– 5 2 ID = 11A
Gate-to-Source Charge ––– ––– 13 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 250V
Rise Time ––– 35 ––– ID = 11A
Turn-Off Delay Time ––– 32 ––– RG = 9.1Ω
ns
Fall Time ––– 28 ––– RD = 22Ω,See Fig. 10
Input Capacitance ––– 1423 ––– VGS = 0V
Output Capacitance ––– 208 ––– VDS = 25V
Reverse Transfer Capacitance ––– 8.1 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 2000 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 55 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 275 mJ
Avalanche Current ––– 11 A
Repetitive Avalanche Energy ––– 17 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 11A, VGS = 0V
Reverse Recovery Time ––– 510 770 ns TJ = 25°C, IF = 11A
Reverse RecoveryCharge – –– 3. 4 5.1 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
11
44
showing the
A
p-n junction diode.
G
D
S
IRFB11N50A
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
1 10 100
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
°
T = 150 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
11A
2.5
10
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0
°
T = 150 C
J
°
T = 25 C
J
V = 50V
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
DS
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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