International Rectifier IRF9956 Datasheet
PD - 9.1559A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
IRF9956
HEXFET® Power MOSFET
S1
2
G1
3
S2
4
G2
T o p V iew
Recommended upgrade: IRF7303 or IRF7313
Lower profile/smaller equivalent: IRF7503
81
D1
7
D1
6
D2
5
D2
V
R
DS(on)
= 30V
DSS
= 0.10Ω
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I
Maximum Power Dissipation
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range T
dv/dt 5.0 V/ ns
TA = 25°C 3.5
TA = 70°C 2.8
TA = 25°C 2.0
TA = 70°C 1.3
J, TSTG
DS
GS
I
D
DM
S
P
D
AS
AR
AR
30
± 20
16
1.7
44 mJ
2.0 A
0.20 mJ
-55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
V
A
W
°C/W
8/25/97
IRF9956
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 – – – – – – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– 0.06 0.10 V
––– 0.09 0.20 V
Ω
= 10V, ID = 2.2A
GS
= 4.5V, ID = 1.0A
GS
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance ––– 12 ––– S VDS = 15V, ID = 3.5A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -24V
––– ––– 2.0 V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
µA
nA
= 24V, VGS = 0V
DS
= 24V
GS
Total Gate Charge ––– 6.9 14 ID = 1.8A
Gate-to-Source Charge ––– 1.0 2.0 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 1.8 3.5 VGS = 10V, See Fig. 10
Turn-On Delay Time ––– 6.2 12 VDD = 10V
Rise Time ––– 8.8 18 ID = 1.0A
Turn-Off Delay Time ––– 13 26 RG = 6.0Ω
ns
Fall Time ––– 3.0 6.0 RD = 10Ω
Input Capacitance ––– 190 ––– VGS = 0V
Output Capacitance ––– 120 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 16
Diode Forward Voltage ––– 0.82 1.2 V TJ = 25°C, IS = 1.25A, VGS = 0V
Reverse Recovery Time ––– 27 53 ns TJ = 25°C, IF = 1.25A
Reverse RecoveryCharge ––– 28 57 nC di/dt = 100A/µs
I
≤ 2.0A, di/dt ≤ 100A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 22mH
J
= 2.0A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
1.7
D
A
DD
≤ V
(BR)DSS
,
G
S
IRF9956
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
10
D
I , Drain-to-Source Cu rrent (A)
3.0V
20µs PULS E W I DT H
T = 25 °C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
100
J
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
10
D
I , Drain-to-Source Current (A)
3.0V
20µs PULS E W I DT H
T = 150°C
A
1
0.1 1 10
V , Drain-to -Sou rce Vo ltage ( V)
DS
J
A
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
100
T = 25°C
10
D
I , Dr a in -to -Sou rce C u rrent (A)
1
3.0 3.5 4.0 4.5 5.0 5.5 6.0
J
T = 150°C
J
V = 10V
DS
20µs PULSE W IDTH
V , Ga te-to-So urce Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
10
T = 150°C
J
T = 25°C
1
SD
I , Reverse Drain Current (A)
A
0.1
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-to-Drain Voltage (V)
SD
J
V = 0V
GS
A
Fig 4. Typical Source-Drain Diode
Forward Voltage
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