International Rectifier IRF9952 Datasheet

PD - 9.1561A

PRELIMINARY

l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Very Low Gate Charge and

Switching Losses

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.

IRF9952

HEXFET® Power MOSFET

N-CHANNEL MOSFET
1

S1

2

G1

3

S2

4

G2

P-CHANNEL MOSFET

T op V iew

Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509

8

D1

7

D1

D2

D2

V

6

5

R

N-Ch P-Ch

30V -30V

DSS

0.10Ω 0.25Ω

DS(on)

SO-8

Symbol Maximum Units

N-Channel P-Channel

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current

TA = 25°C 3.5 -2.3

TA = 70°C 2.8 -1.8
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I

Maximum Power Dissipation 

TA = 25°C 2.0

TA = 70°C 1.3
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E

DS
GS

I

D

DM

S

P

D

AS

AR

AR

30

± 20

16 -10

1.7 -1.3

44 57 mJ

2.0 -1.3 A

0.25 mJ
Peak Diode Recovery dv/dt  dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range T

J, TSTG

-55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units

Maximum Junction-to-Ambient  R

θJA

62.5

V

A

W

°C/W

8/25/97

IRF9952

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage
Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±20V
Total Gate Charge

Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 30 — — V
P-Ch -30 — — V
N-Ch — 0.015 — Reference to 25°C, I
P-Ch — 0.015 — Reference to 25°C, I

— 0.08 0.10 V

N-Ch

— 0.12 0.15 V
— 0.1650.250 V

P-Ch

— 0.2900.400 V

V/°C

N-Ch 1.0 — — V
P-Ch -1.0 — — V
N-Ch — 12 — V
P-Ch — 2.4 — V
N-Ch — — 2.0 V
P-Ch — — -2.0 V
N-Ch — — 25 V

µA

P-Ch — — -25 V
N-Ch — 6.9 14

P-Ch — 6.1 12
N-Ch — 1.0 2.0
P-Ch — 1.7 3.4

nC

N-Ch — 1.8 3.5
P-Ch — 1.1 2.2
N-Ch — 6.2 12
P-Ch — 9.7 19
N-Ch — 8.8 18
P-Ch — 14 28
N-Ch — 13 26

ns

P-Ch — 20 40
N-Ch — 3.0 6.0
P-Ch — 6.9 14
N-Ch — 190 —
P-Ch — 190 —
N-Ch — 120 — pF
P-Ch — 110 —
N-Ch — 61 —
P-Ch — 54 —

= 0V, ID = 250µA

GS

V

= 0V, ID = -250µA

GS

= 10V, ID = 2.2A 

GS

= 4.5V, ID = 1.0A 

GS

Ω

= -10V, ID = -1.0A 

GS

= -4.5V, ID = -0.50A 

GS

= VGS, ID = 250µA

DS

V

= VGS, ID = -250µA

DS

= 15V, ID = 3.5A 

DS

S

= -15V, ID = -2.3A 

DS

= 24V, VGS = 0V

DS

= -24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 125°C

DS

= -24V, VGS = 0V, TJ = 125°C

DS

nA

N-Channel

= 1.8A, VDS = 10V, VGS = 10V

I

D

P-Channel
I

= -2.3A, VDS = -10V, VGS = -10V

D

N-Channel
V

= 10V, ID = 1.0A, RG = 6.0Ω,

DD

R

= 10Ω

D

P-Channel
V

= -10V, ID = -1.0A, RG = 6.0Ω,

DD

R

= 10Ω

D

N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz

P-Channel

= 0V, VDS = -15V, ƒ = 1.0MHz

V

GS

= 1mA

D

= -1mA

D





Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 23 )

 N-Channel I

P-Channel I

 N-Channel Starting T

P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, I

≤ 2.0A, di/dt ≤ 100A/µs, V

SD

≤ -1.3A, di/dt ≤ 84A/µs, V

SD

= 25°C, L = 22mH RG = 25Ω, I

J

DD

DD

≤ V

≤ V

N-Ch — — 1.7
P-Ch — — -1.3
N-Ch — — 16

P-Ch — — 16
N-Ch — 0.82 1.2 T
P-Ch — -0.82 -1.2 T
N-Ch — 27 53
P-Ch — 27 54
N-Ch — 28 57
P-Ch — 31 62

, TJ ≤ 150°C

(BR)DSS

, TJ ≤ 150°C

(BR)DSS

= 2.0A. (See Figure 12)

AS

= -1.3A.

AS

A

= 25°C, IS = 1.25A, VGS = 0V 

J

V

= 25°C, IS = -1.25A, VGS = 0V 

J

N-Channel

ns

= 25°C, IF =1.25A, di/dt = 100A/µs

T

J

P-Channel 

nC

= 25°C, IF = -1.25A, di/dt = 100A/µs

T

J

 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 Surface mounted on FR-4 board, t ≤ 10sec.

N-Channel

IRF9952

100

VGS
TOP 15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V
BOTT OM 3.0V

10

D

I , Drain-to-Source Cu rrent (A)

3.0V

20µs PU LSE W IDTH
T = 25 °C

1

0.1 1 10

V , D rain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V
BOTT OM 3.0V

10

D

I , Drain-to-Source Current (A)

3.0V

20µs PU LSE W IDTH
T = 150°C

A

1

0.1 1 10

V , Drain-to -Sou rce Vo ltage ( V)

DS

J

A

Fig 2. Typical Output Characteristics

100

T = 25°C

10

D

I , Dra in -to -Sou rce Curren t (A )

1

3.0 3.5 4.0 4.5 5.0 5.5 6.0

J

T = 150°C

J

V = 10V

DS

20µs PULSE W IDTH

V , Ga te-to-So urce Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

10

T = 150°C

J

T = 25°C

1

SD

I , Rev ers e Dr ain C u rren t (A)

A

0.1

0.4 0.6 0.8 1.0 1.2 1.4

V , Sour c e-to-D rain Volt a ge (V)

SD

J

V = 0V

GS

A

Fig 4. Typical Source-Drain Diode

Forward Voltage