International Rectifier IRF9530NS, IRF9530NL Datasheet
PD - 91523A
IRF9530NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF9530NS)
l Low-profile through-hole (IRF9530NL)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9530NL) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 79 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -56
Linear Derating Factor 0.53 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 250 mJ
Avalanche Current -8.4 A
Repetitive Avalanche Energy 7.9 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.9
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
2
D Pak
D
V
R
DS(on)
= -100V
DSS
= 0.20Ω
ID = -14A
S
TO-262
°C/W
°C
5/13/98
IRF9530NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = -10V, ID = -8.4A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 3.2 ––– ––– S VDS = -50V, ID = -8.4A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 58 ID = -8.4A
Gate-to-Source Charge ––– ––– 8.3 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 32 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 15 ––– VDD = -50V
Rise Time ––– 58 ––– ID = -8.4A
Turn-Off Delay Time ––– 45 ––– RG = 9.1Ω
ns
Fall Time ––– 46 ––– RD = 6.2Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 760 ––– VGS = 0V
Output Capacitance ––– 260 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-14
-56
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V
Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = -8.4A
Reverse Recovery Charge ––– 650 970 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L =7.0mH
J
= -8.4A. (See Figure 12)
AS
≤ -8.4A, di/dt ≤ -490A/µs, V
DD
≤ V
(BR)DSS
Uses IRF9530N data and test conditions
,
D
G
S
IRF9530NS/L
A
A
)
A
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
1
D
-I , Drain-to -S ou rce C urre nt (A )
-4.5V
20µs PULSE WIDTH
TJ = 25°C TJ = 175°C
T = 25 °C
0.1
0.1 1 10 1 00
-V , Drain-to-S ource Voltage (V)
DS
100
c
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
1
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
-V , Dra in-t o- S o u rc e Voltage (V
DS
C
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
-14A
T = 25°C
10
1
D
-I , D rain- to-S o urc e C u rre nt (A )
0.1
45678910
J
T = 175°C
J
V = -50 V
DS
20µs PULSE W IDTH
-V , Ga te-to-Source Volta ge (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
-10V
Loading...